- 您現在的位置：買賣IC網 > PDF目錄359219 > MRFE6S9130HR3 (飛思卡爾半導體(中國)有限公司) RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs PDF資料下載
參數資料
| 型號： | MRFE6S9130HR3 |
| 廠商： | 飛思卡爾半導體(中國)有限公司 |
| 英文描述： | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| 中文描述： | 射頻功率場效應晶體管N溝道增強型MOSFET的外側 |
| 文件頁數： | 2/11頁 |
| 文件大?。?/td> | 422K |
| 代理商： | MRFE6S9130HR3 |
2
RF Device Data
Freescale Semiconductor
MRFE6S9130HR3 MRFE6S9130HSR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1A (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
IV (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 66 Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
10
μ
Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
1
μ
Adc
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
—
—
10
μ
Adc
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 400
μ
Adc)
V
GS(th)
1
2.1
3
Vdc
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 950 mAdc, Measured in Functional Test)
V
GS(Q)
2
2.9
4
Vdc
Drain-Source On-Voltage
(V
GS
= 10 Vdc, I
D
= 2.74 Adc)
V
DS(on)
—
0.22
0.5
Vdc
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
1.6
—
pF
Output Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
oss
—
66
—
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 950 mA, P
out
= 27 W Avg. N-CDMA, f = 880 MHz,
Single-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @
±
750 kHz Offset.
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
G
ps
18
19.2
21
dB
Drain Efficiency
η
D
29
30.5
—
%
Adjacent Channel Power Ratio
ACPR
—
-47.6
-46
dBc
Input Return Loss
IRL
—
-29
-9
dB
1. Part internally input matched.
相關PDF資料 |
PDF描述 |
|---|---|
| MRFE6S9135HR3 | N-Channel Enhancement-Mode Lateral MOSFETs |
| MRFG35002N6T1 | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
| MRFG35003MT1 | RF Reference Design Library Gallium Arsenide PHEMT |
| MRFG35005MT1 | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
| MRFG35005NT1 | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MRFE6S9130HR3_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRFE6S9130HR5 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 130W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S9130HSR3 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 130W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S9130HSR5 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 130W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S9135HR3 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 135W NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
發(fā)布緊急采購，3分鐘左右您將得到回復。