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參數(shù)資料
| 型號： | MRFE6S9045NR1 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | RF Power Field Effect Transistor |
| 中文描述： | RF功率場效應(yīng)晶體管 |
| 文件頁數(shù)： | 3/15頁 |
| 文件大?。?/td> | 579K |
| 代理商： | MRFE6S9045NR1 |
MRFE6S9045NR1
3
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
(T
C
= 25
°
C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical GSM EDGE Performances
(In Freescale GSM EDGE Test Fixture Optimized for 920-960 MHz, 50 ohm system) V
DD
= 28 Vdc,
I
DQ
= 350 mA, P
out
= 16 W Avg., f = 920-960 MHz, GSM EDGE Signal
Power Gain
G
ps
—
20
—
dB
Drain Efficiency
η
D
—
46
—
%
Error Vector Magnitude
EVM
—
1.5
—
%
Spectral Regrowth at 400 kHz Offset
SR1
—
-62
—
dBc
Spectral Regrowth at 600 kHz Offset
SR2
—
-78
—
dBc
Typical CW Performances
(In Freescale GSM Test Fixture Optimized for 920-960 MHz, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 350 mA,
P
out
= 45 W, f = 920-960 MHz
Power Gain
G
ps
η
D
—
20
—
dB
Drain Efficiency
—
68
—
%
Input Return Loss
IRL
—
-12
—
dB
P
out
@ 1 dB Compression Point
(f = 940 MHz)
P1dB
—
52
—
W
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28
Vdc, I
DQ
= 350
mA, 865-900
MHz Bandwidth
Video Bandwidth @ 48 W PEP P
out
where IM3 = -30 dBc
(Tone Spacing from 100 kHz to VBW)
Δ
IMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
VBW
—
10
—
MHz
Gain Flatness in 35 MHz Bandwidth @ P
out
= 10 W Avg.
G
F
—
0.72
—
dB
Gain Variation over Temperature
(-30
°
C to +85
°
C)
Δ
G
—
0.011
—
dB/
°
C
Output Power Variation over Temperature
(-30
°
C to +85
°
C)
Δ
P1dB
—
0.006
—
dBm/
°
C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRFE6S9045NR1-CUT TAPE | 制造商:Freescale 功能描述:MRFE6S9045 Series 880 MHz 10 W 28 V N-Channel RF Power MOSFET |
| MRFE6S9046GNR1 | 功能描述:射頻MOSFET電源晶體管 HV6E 45W GSM RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S9046NR1 | 功能描述:射頻MOSFET電源晶體管 HV6E 45W GSM RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S9060GNR1 | 功能描述:射頻MOSFET電源晶體管 HV6E 60W TO 270-2GN FET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S9060NR1 | 功能描述:射頻MOSFET電源晶體管 HV6E 60W TO270-2N FET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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