- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359219 > MRFE6P3300HR3 (飛思卡爾半導(dǎo)體(中國)有限公司) RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET PDF資料下載
參數(shù)資料
| 型號： | MRFE6P3300HR3 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| 中文描述： | RF功率場效應(yīng)晶體管N溝道增強型MOSFET的側(cè)向 |
| 文件頁數(shù)： | 3/12頁 |
| 文件大小： | 430K |
| 代理商： | MRFE6P3300HR3 |
MRFE6P3300HR3 MRFE6P3300HR5
3
RF Device Data
Freescale Semiconductor
Figure 1. 820-900 MHz Narrowband Test Circuit Schematic
Z12, Z13
Z14, Z15
Z16, Z17
Z19, Z20
PCB
0.225
″
x 0.507
″
Microstrip
0.440
″
x 0.435
″
Microstrip
0.123
″
x 0.215
″
Microstrip
0.165
″
x 0.339
″
Microstrip
Arlon GX-0300-55-22, 0.030
″
,
ε
r
= 2.5
Z1, Z18
Z2, Z3
Z4, Z5
Z6, Z7
Z8, Z9
Z10, Z11
0.401
″
x 0.081
″
Microstrip
0.563
″
x 0.101
″
Microstrip
1.013
″
x 0.058
″
Microstrip
0.416
″
x 0.727
″
Microstrip
0.191
″
x 0.507
″
Microstrip
1.054
″
x 0.150
″
Microstrip
RF
INPUT
C2
R3
C1
C3
V
BIAS
Z6
C4
Z7
C5
Z1
DUT
C8
C9
R2
B2
V
SUPPLY
Z8
Z9
Z13
Z15
Z17
C13
C24
C19
V
SUPPLY
RF
OUTPUT
Z18
V
BIAS
Z4
Z5
Z2
Z3
Z11
Z10
+
+
+
C7
R1
B1
C14
C12
Z12
Z14
Z16
C20
C22
+
C21
C23
C15
+
C16
C18
+
C17
C10 C11
C6
COAX1
COAX2
COAX3
COAX4
Z19
Z20
Table 5. 820-900 MHz Narrowband Test Circuit Component Designations and Values
Part
Description
B1, B2
Ferrite Beads, Short
C1, C9
1.0
μ
F, 50 V Tantulum Chip Capacitors
C2, C7, C17, C21
0.1
μ
F, 50 V Chip Capacitors
C3, C8, C16, C20
1000 pF Chip Capacitors
C4, C5, C13, C14
100 pF Chip Capacitors
C6, C12
8.2 pF Chip Capacitors
C10
9.1 pF Chip Capacitor
C11
1.8 pF Chip Capacitor
C15, C19
47
μ
F, 50 V Electrolytic Capacitors
C18, C22
470
μ
F, 63 V Electrolytic Capacitors
C23, C24
22 pF Chip Capacitors
Coax1, 2, 3, 4
50
Ω
, Semi Rigid Coax, 2.06
″
Long
R1, R2
10
Ω
, 1/4 W Chip Resistors
R3
1 k
Ω
, 1/4 W Chip Resistor
Part Number
2743019447
T491C105K050AT
CDR33BX104AKYS
ATC100B102JT50XT
ATC100B101JT500XT
ATC100B8R2JT500XT
ATC100B9R1BT500XT
ATC100B1R8BT500XT
EMVY500ADA470MF80G
ESME630ELL471MK255
ATC100B220FT500XT
UT-141A-TP
CRCW120610R0FKTA
CRCW12061001FKTA
Manufacturer
Fair-Rite
Kemet
Kemet
ATC
ATC
ATC
ATC
ATC
Nippon
United Chemi-Con
ATC
Micro-Coax
Vishay
Vishay
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRFE6S9045NR1 | RF Power Field Effect Transistor |
| MRFE6S9130HR3 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRFE6S9135HR3 | N-Channel Enhancement-Mode Lateral MOSFETs |
| MRFG35002N6T1 | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
| MRFG35003MT1 | RF Reference Design Library Gallium Arsenide PHEMT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRFE6P3300HR3_09 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRFE6P3300HR5 | 功能描述:射頻MOSFET電源晶體管 HV6 900MHZ 300W NI860ML RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6P9220HR3 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 200W NI860ML RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6P9220HR5 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 200W NI860ML RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S8046GNR1 | 功能描述:射頻MOSFET電源晶體管 HV6E 45W GSM RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。