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參數(shù)資料
| 型號(hào)： | MRF9582NT1 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國(guó))有限公司 |
| 英文描述： | Silicon Lateral FET, N -Channel Enhancement-Mode MOSFET |
| 中文描述： | 硅橫向場(chǎng)效應(yīng)管，N溝道增強(qiáng)型MOSFET |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 297K |
| 代理商： | MRF9582NT1 |
2
RF Device Data
Freescale Semiconductor
MRF9582NT1
Table 4. Electrical Characteristics
(T
C
= 25
°
C, unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage (V
GS
= 0, I
D
= 100 nAdc)
V
(BR)DSS
—
45
—
Vdc
Drain-Source Leakage Current (V
DS
= 12.5 Vdc, V
GS
= 0)
I
DSS
—
—
100
nAdc
Gate-Source Leakage Current (V
GS
= 5 Vdc, V
DS
= 0)
I
GSS
—
—
100
nAdc
On Characteristics
Gate Threshold Voltage
V
GS
—
2.4
—
Vdc
Resistance Drain-Source (V
GS
= 5 Vdc, I
D
= 300 mA)
R
DS(on)
0.05
0.5
0.8
Ω
Dynamic Characteristics
Input Capacitance (V
DS
= 12.5 Vdc, V
GS
= 0, f = 1.0 MHz)
C
iss
—
30.77
—
pF
Output Capacitance (V
DS
= 12.5 Vdc, V
GS
= 0, f = 1.0 MHz)
C
oss
—
15.6
—
pF
Feedback Capacitance (V
DS
= 12.5 Vdc, V
GS
= 0, f = 1.0 MHz)
C
rss
—
0.82
—
pF
Typical Characteristics
Power Gain (V
DD
= 12.5 Vdc, P
in
= 27.5 dBm, f = 849 MHz)
G
ps
—
10.5
—
dB
Drain Efficiency (V
DD
= 12.5 Vdc, P
in
= 27.5 dBm, f = 849 MHz)
η
D
—
55
—
%
Output Power
P
out
—
38
—
dBm
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