參數(shù)資料
型號: MRF9200LR3
廠商: 飛思卡爾半導體(中國)有限公司
英文描述: N−Channel Enhancement−Mode Lateral MOSFETs
文件頁數(shù): 3/12頁
文件大小: 775K
代理商: MRF9200LR3
MRF9200LR3 MRF9200LSR3
3
Freescale Semiconductor
Wireless RF Product Device Data
Figure 1. MRF9200LR3(SR3) Test Circuit Schematic
Z14
Z15
Z16
Z17
Z18
PCB
0.197
x 0.750
x 0.111
Taper
0.331
x 0.115
Microstrip
0.557
x 0.830
Microstrip
0.078
x 0.830
Microstrip
0.414
x 0.750
Microstrip
Arlon, 0.030
,
ε
r
= 2.56
Z1
Z2
Z3
Z4
Z5
Z6
Z7
0.015
x 0.083
Microstrip
0.048
x 0.083
Microstrip
0.352
x 0.083
Microstrip
0.086
x 0.050
Microstrip
0.367
x 0.050
Microstrip
0.417
x 0.115
Microstrip
0.068
x 0.397
Microstrip
Z8
Z9
Z10
Z11
Z12
Z13
0.335
x 0.397
Microstrip
0.134
x 0.825
x 0.090
Taper
0.209
x 0.825
Microstrip
0.148
x 0.825
Microstrip
0.148
x 0.750
Microstrip
0.435
x 0.750
Microstrip
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF9200LR3_06 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
MRF9200LSR3 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
MRF9210 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistor
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MRF9210R5 功能描述:射頻MOSFET電源晶體管 200W RF LDMOS NI860ML RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray