- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359219 > MRF9200LR3 (飛思卡爾半導(dǎo)體(中國(guó))有限公司) N−Channel Enhancement−Mode Lateral MOSFETs PDF資料下載
參數(shù)資料
| 型號(hào)： | MRF9200LR3 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國(guó))有限公司 |
| 英文描述： | N−Channel Enhancement−Mode Lateral MOSFETs |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 775K |
| 代理商： | MRF9200LR3 |
2
Freescale Semiconductor
Wireless RF Product Device Data
MRF9200LR3 MRF9200LSR3
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
(per JESD22
A114)
1C (Minimum)
Machine Model
(per EIA/JESD22
A115)
B (Minimum)
Charge Device Model
(per JESD22
C101)
IV (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
10
μ
Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
1
μ
Adc
Gate
Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
—
—
1
μ
Adc
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 100
μ
Adc)
V
GS(th)
1.5
2.7
3.5
Vdc
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 2400 mAdc)
V
GS(Q)
3
3.7
4.5
Vdc
Drain
Source On
Voltage
(V
GS
= 10 Vdc, I
D
= 6.0 Adc)
V
DS(on)
—
0.25
0.4
Vdc
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 6.7 Adc)
g
fs
—
8.8
—
S
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
2.5
—
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 26 Vdc, I
DQ
= 2400 mA, P
out
= 40 W Avg. N
CDMA,
f = 880 MHz, Single
Carrier N
CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @
±
750 kHz
Offset. Peak/Avg. Ratio = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
G
ps
16
17.5
—
dB
Drain Efficiency
η
D
22
25
—
%
Adjacent Channel Power Ratio
ACPR
—
46.5
45
dBc
Input Return Loss
IRL
—
13
9
dB
1. Part is internally matched both on input and output.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF9200LSR3 | N−Channel Enhancement−Mode Lateral MOSFETs |
| MRF9582NT1 | Silicon Lateral FET, N -Channel Enhancement-Mode MOSFET |
| MRFE6P3300HR3 | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRFE6S9045NR1 | RF Power Field Effect Transistor |
| MRFE6S9130HR3 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF9200LR3_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF9200LSR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF9210 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistor |
| MRF9210R3 | 功能描述:射頻MOSFET電源晶體管 200W RF LDMOS NI860ML RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF9210R5 | 功能描述:射頻MOSFET電源晶體管 200W RF LDMOS NI860ML RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。