參數(shù)資料
型號: MRF9080LR3
廠商: 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述: RF Power Field Effect Transistors(N−Channel Enhancement−Mode Lateral MOSFETs)
文件頁數(shù): 7/12頁
文件大小: 314K
代理商: MRF9080LR3
MRF9080LR3 MRF9080LSR3
5
7
Freescale Semiconductor
Wireless RF Product Device Data
TYPICAL CHARACTERISTICS
(IN FREESCALE BROADBAND GSM 900 OPTIMIZED DEMO BOARD)
$
%
&
'(
Figure 5. Power Gain versus Output Power
)%&*&#
'+,-(
Figure 6. Power Gain versus Output Power
Figure 7. Power Gain and Input Return Loss
versus Frequency
$
%
&
'(
.
%
&
'(
Figure 8. Output Power and Efficiency versus
Input Power
Figure 9. Power Gain versus Output Power
/
%
.
3
!4
5
*
3
) 3
+,-
.
%
.
3
6
6
.
%
&
'(
/
.
%
&
'(
/
Figure 10. Output Power and Efficiency versus Input
Power
/
%
.
%
15
*
3
5
3
!4
) 3
+,-
°
3
15
15
*
3
) 3
3
5
+,-
°
3
!4
!4
!4
3
!4
5
*
3
3
°
/0
"
.
3
7
7
7
7
7
7
"
3
!4
5
*
3
) 3
3
+,-
°
6
6
6
6
6
6
3
!4
5
*
3
) 3
+,-
°
°
°
6
6
6
6
6
6
6
6
.
°
°
°
°
相關(guān)PDF資料
PDF描述
MRF9200LR3 N−Channel Enhancement−Mode Lateral MOSFETs
MRF9200LSR3 N−Channel Enhancement−Mode Lateral MOSFETs
MRF9582NT1 Silicon Lateral FET, N -Channel Enhancement-Mode MOSFET
MRFE6P3300HR3 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRFE6S9045NR1 RF Power Field Effect Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF9080LR3_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF9080LR5 功能描述:射頻MOSFET電源晶體管 75W 960MHZ 26V NI780L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF9080LSR3 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述:
MRF9080R3 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS
MRF9080R5 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: