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參數(shù)資料
| 型號(hào)： | MRF9080LR3 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | RF Power Field Effect Transistors(N−Channel Enhancement−Mode Lateral MOSFETs) |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 314K |
| 代理商： | MRF9080LR3 |
MRF9080LR3 MRF9080LSR3
5
1
Freescale Semiconductor
Wireless RF Product Device Data
RF Power Field Effect Transistors
N
Channel Enhancement
Mode Lateral MOSFETs
Designed for GSM 900 MHz frequency band, the high gain and broadband
performance of these devices make them ideal for large
signal, common
source amplifier applications in 26 volt base station equipment.
Typical Performance for GSM Frequencies, 921 to 960 MHz, 26 Volts
Output Power @ P1db: 75 Watts
Power Gain @ P1db: 18.5 dB
Efficiency @ P1db: 55%
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 90 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large
Signal Impedance Parameters
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40
μ″
Nominal.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain
Source Voltage
V
DSS
0.5, +65
Vdc
Gate
Source Voltage
V
GS
0.5, +15
Vdc
Total Device Dissipation @ T
C
=
25
°
C
Derate above 25
°
C
P
D
250
1.43
W
W/
°
C
Storage Temperature Range
T
stg
65 to +150
°
C
Operating Junction Temperature
T
J
200
°
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
JC
0.7
°
C/W
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M1 (Minimum)
NOTE
CAUTION
MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MRF9080
Rev. 5, 12/2004
Freescale Semiconductor
Technical Data
MRF9080LR3
MRF9080LSR3
GSM 900 MHz FREQUENCY BAND,
75 W, 26 V
LATERAL N
CHANNEL
RF POWER MOSFETs
CASE 465
06, STYLE 1
NI
780
MRF9080LR3
CASE 465A
06, STYLE 1
NI
780S
MRF9080LSR3
Freescale Semiconductor, Inc., 2004. All rights reserved.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF9080LR3_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF9080LR5 | 功能描述:射頻MOSFET電源晶體管 75W 960MHZ 26V NI780L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF9080LSR3 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRF9080R3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF9080R5 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
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