參數(shù)資料
型號(hào): MRF9060LR1
廠商: 飛思卡爾半導(dǎo)體(中國(guó))有限公司
英文描述: RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs
文件頁(yè)數(shù): 11/12頁(yè)
文件大?。?/td> 238K
代理商: MRF9060LR1
MRF9060LR1 MRF9060LSR1
5
11
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
CASE 360B
05
ISSUE F
NI
360
MRF9060LR1
G
E
C
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A
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D
2X
K
2X
B
B
(FLANGE)
H
F
!
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'''
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CCC
!
A
M
(INSULATOR)
A
T
N
(LID)
!
"
!
'''
!
R
(LID)
S
(INSULATOR)
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CASE 360C
05
ISSUE D
NI
360S
MRF9060LSR1
$0
A
"
"
$
E
C
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'''
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D
2X
B
B
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'''
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"
!
CCC
!
M
(INSULATOR)
T
N
(LID)
(FLANGE)
A
K
2X
PIN 3
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF9060LR1_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF9060LR5 功能描述:射頻MOSFET電源晶體管 60W 1GHZ RFPWR FET NI360 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF9060LSR1 功能描述:射頻MOSFET電源晶體管 60W 945MHZ NI360S LOW AU RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF9060LSR1_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF9060LSR5 功能描述:射頻MOSFET電源晶體管 60W RF PWR FET NI360LS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray