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參數(shù)資料
| 型號： | MRF9060LR1 |
| 廠商： | 飛思卡爾半導體(中國)有限公司 |
| 英文描述： | RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 238K |
| 代理商： | MRF9060LR1 |
MRF9060LR1 MRF9060LSR1
5
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N
Channel Enhancement
Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies up to 1000 MHz. The high gain and broadband performance of these
devices make them ideal for large
signal, common
source amplifier applica-
tions in 26 volt base station equipment.
Typical Two
Tone Performance at 945 MHz, 26 Volts
Output Power — 60 Watts PEP
Power Gain — 17 dB
Efficiency — 40%
IMD —
31 dBc
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large
Signal Impedance Parameters
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
Low Gold Plating Thickness on Leads. L Suffix Indicates 40
μ″
Nominal.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain
Source Voltage
V
DSS
0.5, +65
Vdc
Gate
Source Voltage
V
GS
0.5, +15
Vdc
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
MRF9060LR1
MRF9060LSR1
P
D
159
0.91
219
1.25
W
W/
°
C
W
W/
°
C
Storage Temperature Range
T
stg
65 to +150
°
C
Operating Junction Temperature
T
J
200
°
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
MRF9060LR1
MRF9060LSR1
R
θ
JC
1.1
0.8
°
C/W
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M1 (Minimum)
NOTE
CAUTION
MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MRF9060
Rev. 8, 12/2004
Freescale Semiconductor
Technical Data
MRF9060LR1
MRF9060LSR1
945 MHz, 60 W, 26 V
LATERAL N
CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B
05, STYLE 1
NI
360
MRF9060LR1
CASE 360C
05, STYLE 1
NI
360S
MRF9060LSR1
Freescale Semiconductor, Inc., 2004. All rights reserved.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF9060LR1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF9060LR5 | 功能描述:射頻MOSFET電源晶體管 60W 1GHZ RFPWR FET NI360 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF9060LSR1 | 功能描述:射頻MOSFET電源晶體管 60W 945MHZ NI360S LOW AU RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF9060LSR1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF9060LSR5 | 功能描述:射頻MOSFET電源晶體管 60W RF PWR FET NI360LS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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