參數(shù)資料
型號: MRF9030MR1_07
廠商: 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述: RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
中文描述: 射頻功率場效應(yīng)晶體管N溝道增強型MOSFET的外側(cè)
文件頁數(shù): 3/16頁
文件大小: 540K
代理商: MRF9030MR1_07
A
A
MRF9030MR1 MRF9030MBR1
3
RF Device Data
Freescale Semiconductor
Figure 1. 930-960 MHz Broadband Test Circuit Schematic
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
0.260
x 0.060
Microstrip
0.240
x 0.060
Microstrip
0.500
x 0.100
Microstrip
0.200
x 0.270
Microstrip
0.330
x 0.270
Microstrip
0.140
x 0.270
x 0.520
, Taper
0.040
x 0.520
Microstrip
0.090
x 0.520
Microstrip
0.370
x 0.520
Microstrip (MRF9030MR1)
0.290
x 0.520
Microstrip (MRF9030MBR1)
0.130
x 0.520
Microstrip (MRF9030MR1)
0.210
x 0.520
Microstrip (MRF9030MBR1)
Z10
Z11
Z12
Z13
Z14
Z15
Z16
Z17
Z18
Board
0.360
x 0.270
Microstrip
0.050
x 0.270
Microstrip
0.110
x 0.060
Microstrip
0.220
x 0.060
Microstrip
0.100
x 0.060
Microstrip
0.870
x 0.060
Microstrip
0.240
x 0.060
Microstrip
0.340
x 0.060
Microstrip
Taconic RF-35-0300,
ε
r
= 3.5
Z14
C18
RF
INPUT
RF
OUTPUT
Z1
Z2
V
GG
C1
L1
V
DD
Z3
Z10
Z11
Z9
L2
B2
Z4
Z13
C16
B1
C8
C2
C5
C17
C9
Z15
Z18
C14
+
+
+
+
DUT
C7
C15
C3
C4
C6
C10
C11
C12
Z16
Z17
Z8
C13
Z5
Z6
Z7
Z12
Table 6. 930 - 960 MHz Broadband Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
B2
C1, C7, C14, C15
C2
C3, C11
C4, C12
C5, C6
C8, C16, C17
C9, C10
C13
Short Ferrite Bead, Surface Mount
Long Ferrite Bead, Surface Mount
47 pF Chip Capacitors
0.6-4.5 Variable Capacitor, Gigatrim
3.9 pF Chip Capacitors
0.8-8.0 Variable Capacitors, Gigatrim
6.8 pF Chip Capacitors
10
μ
F, 35 V Tantulum Chip Capacitors
10 pF Chip Capacitors
1.8 pF Chip Capacitor (MRF9030MR1)
0.6-4.5 Variable Capacitor, Gigatrim (MRF9030MBR1)
220
μ
F Electrolytic Chip Capacitor
12.5 nH Coilcraft Inductors
20 mil Brass Shim (0.250 x 0.250)
Etched Circuit Board
95F786
95F787
100B470JP 500X
44F3360
100B3R6BP 500X
44F3360
100B7R5JP 500X
93F2975
100B100JP 500X
100B1R8BP
44F3360
14F185
A04T-5
RF-Design Lab
900 MHz
μ
250/Viper Rev 02
Newark
Newark
ATC
Newark
ATC
Newark
ATC
Newark
ATC
ATC
Newark
Newark
Coilcraft
RF-Design Lab
DSelectronics
C18
L1, L2
WB1, WB2
PCB
相關(guān)PDF資料
PDF描述
MRF9030MR1 RF Power Field Effect Transistors
MRF9045LR1 RF Power Field Effect Transistors
MRF9060LR1 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs
MRF9080LR3 RF Power Field Effect Transistors(N−Channel Enhancement−Mode Lateral MOSFETs)
MRF9200LR3 N−Channel Enhancement−Mode Lateral MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF9030NBR1 功能描述:IC MOSFET RF N-CHAN TO272-2 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3(TO-236) 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF9030NR1 功能描述:射頻MOSFET電源晶體管 30W RF PWR FET TO-270N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF9030NR1_06 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF9030R1 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS
MRF9030SR1 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS