參數(shù)資料
型號: MRF9002NR2
廠商: 飛思卡爾半導體(中國)有限公司
英文描述: RF Power Field Effect Transistor Array N-Channel Enhancement-Mode Lateral MOSFET
中文描述: RF功率場效應晶體管陣列N溝道增強型MOSFET的側向
文件頁數(shù): 7/12頁
文件大?。?/td> 403K
代理商: MRF9002NR2
MRF9002NR2
7
RF Device Data
Freescale Semiconductor
Figure 12. Series Equivalent Source and Load Impedance
f
MHz
Z
source
Ω
Z
load
Ω
925
960
985
4.5 + j13.3
4.1 + j15.8
4.3 + j15.3
23.4 + j9.2
23.2 + j10.4
23.0 + j11.1
V
DD
= 26 V, I
DQ
= 25 mA, P
out
= 2 W PEP
f = 925 MHz
Z
o
= 50
Ω
f = 925 MHz
985 MHz
985 MHz
f
MHz
Z
source
Ω
Z
load
Ω
925
960
985
6.0 + j12.3
5.8 + j16.5
5.9 + j14.3
19.7 + j27.8
22.0 + j23.9
22.5 + j25.4
V
DD
= 26 V, I
DQ
= 25 mA, P
out
= 2 W PEP
f
MHz
Z
source
Ω
Z
load
Ω
925
960
985
4.3 + j12.2
3.9 + j15.9
4.3 + j14.0
23.1 + j6.5
22.8 + j8.4
22.6 + j9.3
V
DD
= 26 V, I
DQ
= 25 mA, P
out
= 2 W PEP
Transistor 2
Transistor 3
Transistor 1
Z
source
Z
load
f = 925 MHz
Z
o
= 50
Ω
f = 925 MHz
985 MHz
985 MHz
f = 925 MHz
985 MHz
Z
source
T 1
T 2
T 1
f = 925 MHz
985 MHz
Z
load
T 2
T 3
T 3
TRANSISTORS 1 and 2
TRANSISTOR 3
Zsource
Zload
Input
Matching
Network
Device
Under Test
Output
Matching
Network
Z
source
=
Test circuit impedance as measured from
gate to ground.
Z
load
=
Test circuit impedance as measured
from drain to ground.
Z
load
Z
source
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