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參數(shù)資料
| 型號： | MRF9002NR2 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | RF Power Field Effect Transistor Array N-Channel Enhancement-Mode Lateral MOSFET |
| 中文描述： | RF功率場效應(yīng)晶體管陣列N溝道增強型MOSFET的側(cè)向 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 403K |
| 代理商： | MRF9002NR2 |
6
RF Device Data
Freescale Semiconductor
MRF9002NR2
TYPICAL CHARACTERISTICS
C
rss
C
iss
30
2
12
22
V
DS
, DRAIN SOURCE SUPPLY (VOLTS)
Figure 10. Capacitance versus Drain Source Voltage
C
oss
23
24
25
26
27
28
29
3
4
5
6
7
8
9
10
11
C
210
10
9
T
J
, JUNCTION TEMPERATURE (
°
C)
This above graph displays calculated MTTF in hours x ampere
2
drain current. Life tests at elevated temperatures have correlated to
better than
±
10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
D2
for MTTF in a particular application.
10
8
10
6
M
2
)
90
110
130
150
170
190
Figure 11. MTTF Factor versus Junction Temperature
100
120
140
160
180
200
10
7
相關(guān)PDF資料 |
PDF描述 |
|---|---|
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| MRF9060LR1 | RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF9002R2 | 制造商:MOT 功能描述:_ |
| MRF9002RS | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR ARRAY |
| MRF901 | 制造商:Motorola Inc 功能描述: |
| MRF9011 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:The Rf Line NPN Silicon High-Frequency Transistor |
| MRF9011L | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:The Rf Line NPN Silicon High-Frequency Transistor |
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