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參數(shù)資料
| 型號(hào)： | MRF9002NR2 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國(guó))有限公司 |
| 英文描述： | RF Power Field Effect Transistor Array N-Channel Enhancement-Mode Lateral MOSFET |
| 中文描述： | RF功率場(chǎng)效應(yīng)晶體管陣列N溝道增強(qiáng)型MOSFET的側(cè)向 |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大小： | 403K |
| 代理商： | MRF9002NR2 |
MRF9002NR2
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor Array
N-Channel Enhancement-Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequen-
cies to 1000 MHz. The high gain and broadband performance of this device
make it ideal for large-signal, common-source amplifier applications in 26 volt
base station equipment. The device is in a PFP-16 Power Flat Pack package
which gives excellent thermal performances through a solderable backside
contact.
Typical Performance at 960 MHz, 26 Volts
Output Power — 2 Watts Per Transistor
Power Gain — 18 dB
Efficiency — 50%
Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 2 Watts CW
Output Power
Features
Designed for Maximum Gain and Insertion Phase Flatness
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
RoHS Compliant
In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
- 0.5, +65
Vdc
Gate-Source Voltage
V
GS
- 0.5, +15
Vdc
Total Dissipation Per Transistor @ T
C
= 25
°
C
P
D
4
W
Storage Temperature Range
T
stg
- 65 to +150
°
C
Operating Junction Temperature
T
J
150
°
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(1)
Unit
Thermal Resistance, Junction to Case, Single Transistor
R
θ
JC
12
°
C/W
Table 3. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
3
260
°
C
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Document Number: MRF9002NR2
Rev. 8, 5/2006
Freescale Semiconductor
Technical Data
MRF9002NR2
1000 MHz, 2 W, 26 V
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFET
CASE 978-03
PLASTIC
PFP-16
Figure 1. Pin Connections
16
15
14
13
12
11
10
1
2
3
4
5
6
7
8
(Top View)
9
N.C.
GATE1
N.C.
GATE2
N.C.
GATE3
N.C.
DRAIN 11
DRAIN 12
DRAIN 21
DRAIN 22
N.C.
DRAIN 31
DRAIN 32
N.C.
N.C.
Note: Exposed backside flag is source
terminal for transistors.
16
1
Freescale Semiconductor, Inc., 2006. All rights reserved.
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