參數(shù)資料
型號(hào)： MRF7S21170HR3
廠商： 飛思卡爾半導(dǎo)體(中國(guó))有限公司
英文描述： RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
中文描述： 射頻功率場(chǎng)效應(yīng)晶體管N溝道增強(qiáng)型MOSFET的外側(cè)
文件頁(yè)數(shù)： 7/13頁(yè)
文件大小： 444K
代理商： MRF7S21170HR3
MRF7S21170HR3 MRF7S21170HSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Output Power
P
out
, OUTPUT POWER (WATTS) PEP
I
60
10
1
100
40
50
10
30
20
7th Order
5th Order
3rd Order
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
TWOTONE SPACING (MHz)
Figure 9. Output Peak-to-Average Ratio
Compression (PARC) versus Output Power
1
P
out
, OUTPUT POWER (WATTS)
1
3
5
40
Actual
Ideal
0
2
4
O
P
10
V
DD
= 28 Vdc, P
out
= 170 W (PEP), I
DQ
= 1400 mA
TwoTone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
IM3U
10
20
40
1
100
I
20
60
400
V
DD
= 28 Vdc, I
DQ
= 1400 mA
f1 = 2135 MHz, f2 = 2145 MHz
TwoTone Measurements, 10 MHz Tone Spacing
50
30
IM3L
IM5U
IM5L
IM7L
IM7U
80
120
18
54
48
42
36
30
24
η
D
,
D
V
DD
= 28 Vdc, I
DQ
= 1400 mA
f = 2140 MHz, Input PAR = 7.5 dB
1 dB = 43.335 W
0
2 dB = 61.884 W
3 dB = 83.111 W
100
Figure 10. Digital Predistortion Correction versus
ACPR and Output Power
P
out
, OUTPUT POWER (dBm)
50
70
20
40
42
41
30
40
50
60
A
43
44
45
46
47
Uncorrected, Upper and Lower
DPD Corrected
No Memory Correction
DPD Corrected, with Memory Correction
V
DD
= 28 Vdc, I
DQ
= 1400 mA, f = 2140
MHz
SingleCarrier WCDMA, PAR = 7.5 dB, ACPR @
5 MHz Offset in 3.84 MHz Integrated Bandwidth
400
13
19
0
60
P
out
, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
V
DD
= 28 Vdc
I
DQ
= 1400 mA
f = 2140 MHz
T
C
= 30 C
25 C
85 C
10
1
18
17
16
15
14
50
40
30
20
10
η
D
,
D
G
ps
η
D
G
p
,
100
30 C
25 C
85 C
48
49
60
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF7S21170HR3_07 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF7S21170HR3_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF7S21170HR3_11 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
MRF7S21170HR3_12 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF7S21170HR5 功能描述:射頻MOSFET電源晶體管 HV7 2.1GHZ WCDMA NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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