參數(shù)資料
型號(hào)： MRF7S18170H
廠商： 飛思卡爾半導(dǎo)體(中國(guó))有限公司
英文描述： RF Power Field Effect Transistors (N-Channel Enhancement-Mode Lateral MOSFETs)
中文描述： 射頻功率場(chǎng)效應(yīng)晶體管（N溝道增強(qiáng)型MOSFET的側(cè)）
文件頁(yè)數(shù)： 6/15頁(yè)
文件大?。?/td> 487K
代理商： MRF7S18170H
6
RF Device Data
Freescale Semiconductor
MRF7S18170HR3 MRF7S18170HSR3
Figure 3. MRF7S18170HSR3 Test Circuit Schematic — NI-880S
Z10*
Z11*
Z12
Z13
Z14*
Z15*
Z16, Z17
PCB
0.900
″
x 0.161
″
Microstrip
0.140
″
x 0.161
″
Microstrip
0.094
″
x 0.220
″
Microstrip
0.070
″
x 0.220
″
Microstrip
0.140
″
x 0.083
″
Microstrip
0.160
″
x 0.083
″
Microstrip
1.120
″
x 0.080
″
Microstrip
Taconic TLX8-0300, 0.030
″
,
ε
r
= 2.55
* Variable for tuning
Z1*
Z2*
Z3*
Z4
Z5
Z6
Z7
Z8
Z9
0.500
″
x 0.083
″
Microstrip
0.290
″
x 0.083
″
Microstrip
0.810
″
x 0.083
″
Microstrip
0.180
″
x 0.147
″
Microstrip
0.850
″
x 0.091
″
Microstrip
0.383
″
x 1.109
″
Microstrip
1.110
″
x 1.360
″
Microstrip
0.480
″
x 1.360
″
Microstrip
0.060
″
x 1.098
″
Microstrip
V
BIAS
V
SUPPLY
RF
OUTPUT
RF
INPUT
DUT
C4
C3
C2
R3
Z1
Z2
Z3
Z4
C1
Z8
Z10
R2
Z5
R1
Z6
Z11
Z12
Z13
Z14
Z15
C18
C19
C20
Z7
C14
C15
C9
C8
Z9
Z16
Z17
C10
C17
C11
C12
C13
C5
C16
C6
C7
+
Table 6. MRF7S18170HSR3 Test Circuit Component Designations and Values — NI-880S
Part
Description
C1
0.8 pF Chip Capacitor
C2, C8, C9
6.8 pF Chip Capacitors
C3
100 pF Chip Capacitor
C4
100 nF Chip Capacitor
C5, C10
5.6 pF Chip Capacitors
C6, C7, C11, C12
10
μ
F Chip Capacitors
C13
470
μ
F, 63 V Electrolytic Capacitor, Radial
C14
0.5 pF Chip Capacitor
C15
0.2 pF Chip Capacitor
C16, C17
4.7 pF Chip Capacitors
C18
2 pF Chip Capacitor
C19
0.3 pF Chip Capacitor
C20
0.1 pF Chip Capacitor
R1
10 , 1/4 W Chip Resistor
R2, R3
10 k , 1/4 W Chip Resistors
Part Number
Manufacturer
ATC
ATC
ATC
ATC
ATC
TDK
Philips
ATC
ATC
ATC
ATC
ATC
ATC
Phycomp
Phycomp
100B0R8BW
100B6R8BW
100B101JW
100B104JW
100B5R6BW
C5750X5R1H106MT
13661471
600B0R5BW
100B0R2BW
100B4R7BW
600B2R0BW
100B0R3BW
100B0R2BW
232272461003
232272461009
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF7S18170HR3 功能描述:射頻MOSFET電源晶體管 1.8GHZ HV7 WCDMA NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF7S18170HR5 功能描述:射頻MOSFET電源晶體管 1.8GHZ HV7 WCDMA NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF7S18170HSR3 功能描述:射頻MOSFET電源晶體管 HV7 1.8GHZ 50W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF7S18170HSR5 功能描述:射頻MOSFET電源晶體管 HV7 1.8GHZ 50W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF7S19080HR3 功能描述:射頻MOSFET電源晶體管 HV7 1.9GHZ 28V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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