參數(shù)資料
型號: MRF6VP11KHR6
廠商: 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述: RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
中文描述: RF功率場效應(yīng)晶體管N溝道增強(qiáng)型MOSFET的側(cè)向
文件頁數(shù): 3/11頁
文件大小: 449K
代理商: MRF6VP11KHR6
MRF6VP11KHR6
3
RF Device Data
Freescale Semiconductor
Figure 2. MRF6VP11KHR6 Test Circuit Schematic
Z14, Z15
Z16*, Z17*
Z18
Z19
PCB
0.116
x 0.253
Microstrip
0.035
x 0.253
Microstrip
0.275
x 0.082
Microstrip
0.845
x 0.082
Microstrip
Arlon CuClad 250GX-0300-55-22, 0.030
,
ε
r
= 2.55
*Line length includes microstrip bends.
Z1
Z2*
Z3*
Z4, Z5
Z6, Z7, Z8, Z9
Z10, Z11
Z12, Z13
0.175
x 0.082
Microstrip
1.461
x 0.082
Microstrip
0.080
x 0.082
Microstrip
0.133
x 0.193
Microstrip
0.500
x 0.518
Microstrip
0.102
x 0.253
Microstrip
0.206
x 0.253
Microstrip
V
BIAS
C2
+
V
SUPPLY
+
C1
C3
+
B1
R1
C4
C5
C6
C7
C8
C9
C10
L1
C11
Z1
RF
INPUT
L2
Z2
C12
Z3
Z4
Z6
Z5
Z7
Z8
C21
Z10
Z9
C22
Z11
C23
Z12
Z13
C24
Z14
Z15
C25
Z16
Z17
RF
OUTPUT
Z19
C26
Z18
+
C20
+
C19
+
C18
C15
C16 C17
C13
C14
L3
R2
T1
T2
DUT
J1
J2
Table 5. MRF6VP11KHR6 Test Circuit Component Designations and Values
Part
B1
95
Ω
, 100 MHz Long Ferrite Bead
C1
47
μ
F, 50 V Electrolytic Capacitor
C2
22
μ
F, 35 V Tantalum Capacitor
C3
10
μ
F, 35 V Tantalum Capacitor
C4, C9, C17
10K pF Chip Capacitors
C5, C16
20K pF Chip Capacitors
C6, C15
0.1
μ
F, 50 V Chip Capacitors
C7
2.2
μ
F, 50 V Chip Capacitor
C8
0.22
μ
F, 100 V Chip Capacitor
C10, C11, C13, C14
1000 pF Chip Capacitors
C12
18 pF Chip Capacitor
C18, C19, C20
470
μ
F, 63 V Electrolytic Capacitors
C21, C22
47 pF Chip Capacitors
C23
75 pF Chip Capacitor
C24, C25
100 pF Chip Capacitors
C26
33 pF Chip Capacitor
J1, J2
Jumpers from PCB to T1 and T2
L1
82 nH Inductor
L2
47 nH Inductor
L3*
10 Turn, #18AWG Inductor, Handwound
R1
1 K
Ω
, 1/4 W Chip Resistor
R2
20
Ω
, 3 W Chip Resistor
T1
Balun
T2
Balun
*L3 is wrapped around R2.
Description
Part Number
Manufacturer
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ATC
ATC
Multicomp
ATC
ATC
ATC
ATC
2743021447
476KXM050M
T491X226K035AT
T491D106K035AT
ATC200B103KT50XT
ATC200B203KT50XT
CDR33BX104AKYS
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ATC100B102JT50XT
ATC100B180JT500XT
EKME630ELL471MK25S
ATC100B470JT500XT
ATC100B750JT500XT
ATC100B101JT500XT
ATC100B330JT500XT
Copper Foil
1812SMS-82NJLC
1812SMS-47NJLC
Copper Wire
PTF561K0000BYEK
5093NW20R00J
TUI-9
TUO-4
CoilCraft
CoilCraft
Vishay
Vishay
Comm Concepts
Comm Concepts
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF6VP11KHR6_09 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
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MRF6VP121KHR6 功能描述:射頻MOSFET電源晶體管 VHV6 1kW 50V NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6VP121KHSR5 制造商:Freescale Semiconductor 功能描述:VHV6 1KW 50V NI1230HS - Tape and Reel 制造商:Freescale Semiconductor 功能描述:LATERAL N-CHANNEL BROADBAND RF POWER MOSFET, 965-1215 MHZ, 1 - Tape and Reel 制造商:Freescale Semiconductor 功能描述:MOSFET RF N-CH 50V NI1230H 制造商:Freescale Semiconductor 功能描述:RF POWER TRANSISTOR LDMOS
MRF6VP121KHSR6 功能描述:射頻MOSFET電源晶體管 VHV6 1kW 50V NI1230HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray