- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359219 > MRF6V2300N (飛思卡爾半導體(中國)有限公司) N-Channel Enhancement-Mode Lateral MOSFETs PDF資料下載
參數(shù)資料
| 型號： | MRF6V2300N |
| 廠商： | 飛思卡爾半導體(中國)有限公司 |
| 英文描述： | N-Channel Enhancement-Mode Lateral MOSFETs |
| 中文描述： | N溝道增強型MOSFET的外側(cè) |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 215K |
| 代理商： | MRF6V2300N |
MRF6V2300N MRF6V2300NB
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFETs
Designed primarily for pulsed wideband large-signal output and driver
applications with frequencies up to 450 MHz. Devices are unmatched and are
suitable for use in industrial, medical and scientific applications.
Typical CW Performance at 220 MHz: V
DD
= 50 Volts, I
DQ
= 900 mA,
P
out
= 300 Watts
Power Gain — 27
dB
Drain Efficiency — 68%
Capable of Handling 10:1 VSWR, @ 50 Vdc, 210 MHz, 300 Watts CW
Output Power
Features
Integrated ESD Protection
Greater Negative Gate-Source Voltage Range for Improved Class C
Operation
Excellent Thermal Stability
Facilitates Manual Gain Control, ALC and Modulation Techniques
225
°
C Capable Plastic Package
RoHS Compliant
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
-0.5, +110
Vdc
Gate-Source Voltage
V
GS
-6.0, +10
Vdc
Storage Temperature Range
T
stg
- 65 to +150
°
C
Operating Junction Temperature
(1,2)
T
J
225
°
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(3)
Unit
Thermal Resistance, Junction to Case
Case Temperature TBD
°
C, TBD W CW
Case Temperature TBD
°
C, TBD W CW
R
θ
JC
TBD
TBD
°
C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product. (Calculator available when part is in production.)
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
This document contains information on a preproduction product. Specifications and information herein are subject to change without notice.
Document Number: Order from RF Marketing
Rev. 4, 10/2006
Freescale Semiconductor
Technical Data
MRF6V2300N
MRF6V2300NB
PREPRODUCTION
CASE 1484-04, STYLE 1
TO-272 WB-4
PLASTIC
MRF6V2300NB
CASE 1486-03, STYLE 1
TO-270 WB-4
PLASTIC
MRF6V2300N
10-450 MHz, 300 W, 50 V
LATERAL N-CHANNEL
SINGLE-ENDED
BROADBAND
RF POWER MOSFETs
PARTS ARE SINGLE-ENDED
Freescale Semiconductor, Inc., 2006. All rights reserved.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF6VP11KHR6 | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF7S18170H | RF Power Field Effect Transistors (N-Channel Enhancement-Mode Lateral MOSFETs) |
| MRF7S19080HR3 | RF Power Field Effect Transistors |
| MRF7S19100NBR1 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF7S19170HR3 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6V2300N_10 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
| MRF6V2300NB | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6V2300NBR1 | 功能描述:射頻MOSFET電源晶體管 VHV6 300W TO272WB4N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V2300NBR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 300W Latrl N-Ch SE Broadband MOSFET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V2300NBR5-CUT TAPE | 制造商:Freescale 功能描述:MRF6V2300N Series 10 - 600 MHz 300 W 50 V N-Channel Single-Ended RF Power MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復。