參數(shù)資料
型號(hào): MRF6S9160HR3
廠(chǎng)商: 飛思卡爾半導(dǎo)體(中國(guó))有限公司
英文描述: RF Power Field Effect Transistors (N-Channel Enhancement-Mode Lateral MOSFETs)
中文描述: 射頻功率場(chǎng)效應(yīng)晶體管(N溝道增強(qiáng)型MOSFET的側(cè))
文件頁(yè)數(shù): 4/12頁(yè)
文件大?。?/td> 546K
代理商: MRF6S9160HR3
4
RF Device Data
Freescale Semiconductor
MRF6S9160HR3 MRF6S9160HSR3
Figure 1. MRF6S9160HR3(SR3) Test Circuit Schematic
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
0.426
x 0.080
Microstrip
0.813
x 0.080
Microstrip
0.471
x 0.080
Microstrip
0.319
x 0.220
Microstrip
0.171
x 0.220
Microstrip
0.200
x 0.425
x 0.630
Taper
0.742
x 0.630
Microstrip
0.233
x 0.630
Microstrip
0.128
x 0.630
Microstrip
0.134
x 0.630
Microstrip
Z11
Z12
Z13
Z14
Z15
Z16
Z17
Z18
Z19
PCB
0.066
x 0.630
Microstrip
0.630
x 0.425
x 0.220
Taper
0.120
x 0.220
Microstrip
0.292
x 0.220
Microstrip
0.023
x 0.220
Microstrip
0.030
x 0.220
Microstrip
0.846
x 0.080
Microstrip
0.440
x 0.080
Microstrip
0.434
x 0.080
Microstrip
Arlon GX-0300-55-22, 0.030
,
ε
r
= 2.55
Z1
RF
INPUT
C1
C4
Z2
Z3
Z4
Z5
Z6
DUT
Z8
Z9
Z10
C11
C12
C15
C2
RF
OUTPUT
C3
Z7
Z11 Z12
Z13
Z16 Z17
Z18
Z19
C18
C16
B1
V
BIAS
L1
L2
C20
C21
C22 C23
C24
V
SUPPLY
+
C14
Z15
Z14
C13
C17
+
R2
C19
R1
B2
C6
C5
C8
C7
C10
C9
Table 5. MRF6S9160HR3(SR3) Test Circuit Component Designations and Values
Part
B1, B2
Ferrite Beads, Small
C1, C2, C19
47 pF Chip Capacitors
C3, C11
0.8-8.0 pF Variable Capacitors, Gigatrim
C4
2.7 pF Chip Capacitor
C5, C6
15 pF Chip Capacitors
C7, C8
12 pF Chip Capacitors
C9, C10
4.3 pF Chip Capacitors
C12
8.2 pF Chip Capacitor
C13, C14
3.9 pF Chip Capacitors
C15
0.6-4.5 pF Variable Capacitor, Gigatrim
C16
22 pF Chip Capacitor
C17
1
μ
F, 50 V Tantalum Capacitor
C18
20K pF Chip Capacitor
C20
180 pF Chip Capacitor
C21, C22, C23
10
μ
F, 50 V Chip Capacitors (2220)
C24
470
μ
F, 63 V Electrolytic Capacitor
L1, L2
10 nH Inductors
R1
180
Ω
Chip Resistor
R2
10
Ω
Chip Resistor
Description
Part Number
Manufacturer
Fair Rite
ATC
Johanson
ATC
ATC
ATC
ATC
ATC
ATC
Johanson
ATC
Kemit
Kemit
ATC
Murata
United Chemi-Con
Coilcraft
2743019447
100B470JP500X
27291SL
100B2R7JP500X
100B150JP500X
100B120JP500X
100B4R3JP500X
100B8R2JP500X
100B3R9JP500X
27271SL
100B220JP500X
T491C105K0J0AS
CDR353P203AK0S
100B181JP500X
GRM55DR61H106KA88B
KME63VB471M12x25LL
0603HC
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF6S9160HR3_08 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF6S9160HR5 功能描述:MOSFET RF N-CHAN 28V 35W NI-780 RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類(lèi)型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3(TO-236) 包裝:帶卷 (TR) 產(chǎn)品目錄頁(yè)面:1558 (CN2011-ZH PDF) 其它名稱(chēng):MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF6S9160HSR3 功能描述:MOSFET RF N-CHAN 28V 35W NI-780S RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類(lèi)型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3(TO-236) 包裝:帶卷 (TR) 產(chǎn)品目錄頁(yè)面:1558 (CN2011-ZH PDF) 其它名稱(chēng):MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF6S9160HSR5 功能描述:MOSFET RF N-CHAN 28V 35W NI-780S RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類(lèi)型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3(TO-236) 包裝:帶卷 (TR) 產(chǎn)品目錄頁(yè)面:1558 (CN2011-ZH PDF) 其它名稱(chēng):MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF6V10010NR4 功能描述:射頻MOSFET電源晶體管 VHV6 10W PULSE PLD1.5 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray