參數(shù)資料
型號: MRF6S9125NR1_06
廠商: 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述: RF Power Field Effect Transistors
中文描述: 射頻功率場效應(yīng)晶體管
文件頁數(shù): 4/20頁
文件大?。?/td> 865K
代理商: MRF6S9125NR1_06
4
RF Device Data
Freescale Semiconductor
MRF6S9125NR1 MRF6S9125NBR1
Figure 1. MRF6S9125NR1(NBR1) Test Circuit Schematic
Z10
Z11
Z12
Z13
Z14
Z15
Z16
PCB
0.057
x 0.620
Microstrip
0.119
x 0.620
Microstrip
0.450
x 0.220
Microstrip
0.061
x 0.220
Microstrip
0.078
x 0.220
Microstrip
0.692
x 0.080
Microstrip
0.368
x 0.080
Microstrip
Arlon GX-0300-55-22, 0.030
,
ε
r
= 2.55
Z1, Z17
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
0.200
x 0.080
Microstrip
1.060
x 0.080
Microstrip
0.382
x 0.220
Microstrip
0.108
x 0.220
Microstrip
0.200
x 0.420
x 0.620
Taper
0.028
x 0.620
Microstrip
0.236
x 0.620
Microstrip
0.050
x 0.620
Microstrip
0.238
x 0.620
Microstrip
R2
V
BIAS
V
SUPPLY
RF
OUTPUT
RF
INPUT
DUT
C3
L1
Z1
C2
Z2
Z3
C1
Z4
Z5
Z6
Z7
C4
Z8
Z9
R1
L2
C10
C6
C11
C18
C20
C21
C22
C9
Z10
Z11
Z12
Z14
Z15
+
+
+
+
C8
+
C7
+
C5
C12
C13
Z13
C14
C15
C16
Z16
C17
Z17
C23
C19
Table 6. MRF6S9125NR1(NBR1) Test Circuit Component Designations and Values
Part
C1
20 pF Chip Capacitor
C2
6.2 pF Chip Capacitor
C3, C15
0.8-8.0 pF Variable Capacitors, Gigatrim
C4, C5
11 pF Chip Capacitors
C6, C18, C19
0.56
μ
F, 50 V Chip Capacitors
C7, C8
47
μ
F, 16 V Tantalum Capacitors
C9, C23
47 pF Chip Capacitors
C10
100
μ
F, 50 V Electrolytic Capacitor
C11, C12
12 pF Chip Capacitors
C13, C14
5.1 pF Chip Capacitors
C16
0.3 pF Chip Capacitor
C17
39 pF Chip Capacitor
C20, C21
22
μ
F, 35 V Tantalum Capacitors
C22
470
μ
F, 63 V Electrolytic Capacitor
L1
7.15 nH Inductor
L2
8.0 nH Inductor
R1
15
Ω
, 1/4 W Chip Resistor (1210)
R2
560 k
Ω, 1
/8 W Resistor (1206)
Description
Part Number
600B200FT250XT
600B6R2BT250XT
27291SL
600B110FT250XT
C1825C564J5RAC
593D476X9016D2T
700B470FW500XT
515D107M050BB6A
600B120FT250XT
600B5R1BT250XT
700B0R3BW500XT
700B390FW500XT
T491X226K035AS
SME63V471M12X25LL
1606-7J
A03T
Manufacturer
ATC
ATC
Johanson
ATC
Kemet
Vishay
ATC
Vishay
ATC
ATC
ATC
ATC
Kemet
United Chemi-Con
CoilCraft
CoilCraft
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MRF6S9130H 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF6S9130HR3 功能描述:MOSFET RF N-CHAN 28V 27W NI-780 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3(TO-236) 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF6S9130HR3_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF6S9130HR5 功能描述:MOSFET RF N-CHAN 28V 27W NI-780 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3(TO-236) 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF6S9130HSR3 功能描述:MOSFET RF N-CHAN 28V 27W NI-780S RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3(TO-236) 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR