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參數(shù)資料
| 型號(hào)： | MRF6S27015GNR1 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國(guó))有限公司 |
| 英文描述： | RF Power Field Effect Transistors |
| 中文描述： | 射頻功率場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 16/17頁(yè) |
| 文件大?。?/td> | 552K |
| 代理商： | MRF6S27015GNR1 |
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RF Device Data
Freescale Semiconductor
MRF6S27015NR1 MRF6S27015GNR1
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
AN1949: Mounting Method for the MHVIC910HNR2 (PFP-16) and Similar Surface Mount Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Aug. 2006
Initial Release of Data Sheet
1
June 2007
Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150 C, p. 1
Operating Junction Temperature increased from 200 C to 225 C in Maximum Ratings table, related
“Continuous use at maximum temperature will affect MTTF” footnote added and changed 200 C to
225 C in Capable Plastic Package bullet, p, 1
Removed footnote and “Measured in Functional Test” from the RF test condition voltage callout for V
GS(Q)
,
and added Fixture Gate Quiescent Voltage, V
GG(Q)
to On Characteristics table, p. 2
V
DS(on)
Typ and Min values corrected in On Characteristics table, p. 2
Output Capacitance Typ value corrected in Dynamic Characteristics table, p. 2
Updated Part Numbers in Table 6, Component Designations and Values, to RoHS compliant part
numbers, p. 3
Replaced Fig. 14, MTTF versus Junction Temperature with updated graph. Removed Amps
2
and listed
operating characteristics and location of MTTF calculator for device, p. 7
Fig. 15, CCDF W-CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single-Carrier Test Signal,
updated to remove IM3 measurement copy from callout in graph, p. 8
Updated Fig. 16, Single-Carrier W-CDMA Spectrum, to correctly reflect integrated bandwidth offsets, p. 8
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6S27015N | 制造商:Freescale Semiconductor 功能描述:TRANS MOSFET N-CH 68V 3PIN TO-270 - Bulk |
| MRF6S27015NR1 | 功能描述:射頻MOSFET電源晶體管 HV6 2.7GHZ 15W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S27015NR1_07 | 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6S27015NR1_08 | 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S27050HR3 | 功能描述:射頻MOSFET電源晶體管 HV6 2700MHZ WCDMA NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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