參數(shù)資料
型號: MRF6S24140HR3
廠商: 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述: RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
中文描述: 射頻功率場效應(yīng)晶體管N溝道增強(qiáng)型MOSFET的外側(cè)
文件頁數(shù): 7/9頁
文件大?。?/td> 465K
代理商: MRF6S24140HR3
MRF6S24140HR3 MRF6S24140HSR3
7
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
CASE 465B-03
ISSUE D
NI-880
MRF6S24140HR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. RECOMMENDED BOLT CENTER DIMENSION OF
1.16 (29.57) BASED ON M3 SCREW.
DIM
A
B
C
D
E
F
G
H
K
M
MIN
1.335
0.535
0.147
0.495
0.035
0.003
1.100 BSC
0.057
0.175
0.872
MAX
1.345
0.545
0.200
0.505
0.045
0.006
MIN
33.91
13.6
3.73
12.57
0.89
0.08
27.94 BSC
1.45
4.44
22.15
MAX
34.16
13.8
5.08
12.83
1.14
0.15
MILLIMETERS
INCHES
0.067
0.205
0.888
1.70
5.21
22.55
N
Q
R
S
0.871
.118
0.515
0.515
0.007 REF
0.010 REF
0.015 REF
0.889
.138
0.525
0.525
19.30
3.00
13.10
13.10
0.178 REF
0.254 REF
0.381 REF
22.60
3.51
13.30
13.30
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
1
3
2
D
T
G
K
C
E
H
F
Q
2X
M
A
M
bbb
B
M
T
M
A
M
bbb
B
M
B
B
(FLANGE)
SEATING
PLANE
M
A
M
ccc
B
M
T
M
A
M
bbb
B
M
T
A
(FLANGE)
T
N
(LID)
M
(INSULATOR)
S
M
A
M
aaa
B
M
T
(INSULATOR)
R
M
A
M
ccc
B
M
T
(LID)
aaa
bbb
ccc
4
CASE 465C-02
ISSUE D
NI-880S
MRF6S24140HSR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM
A
B
C
D
E
F
H
K
M
MIN
0.905
0.535
0.147
0.495
0.035
0.003
0.057
0.170
0.872
MAX
0.915
0.545
0.200
0.505
0.045
0.006
0.067
0.210
0.888
MIN
22.99
13.60
3.73
12.57
0.89
0.08
1.45
4.32
22.15
MAX
23.24
13.80
5.08
12.83
1.14
0.15
1.70
5.33
22.55
MILLIMETERS
INCHES
N
R
S
0.871
0.515
0.515
0.007 REF
0.889
0.525
0.525
19.30
13.10
13.10
0.178 REF
22.60
13.30
13.30
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
1
SEATING
PLANE
2
D
K
C
E
H
F
M
A
M
bbb
B
M
T
B
B
(FLANGE)
M
A
M
ccc
B
M
T
M
A
M
bbb
B
M
N
(LID)
T
A
(FLANGE)
T
M
(INSULATOR)
M
A
M
ccc
B
M
S
(INSULATOR)
T
M
A
M
aaa
B
M
T
R
(LID)
bbb
ccc
0.010 REF
0.015 REF
0.254 REF
0.381 REF
aaa
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF6S24140HR3_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF6S24140HR5 功能描述:射頻MOSFET電源晶體管 2.4GHZ HV6 W-CDMA NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6S24140HS 功能描述:IC MOSFET RF N-CHAN NI-880S RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3(TO-236) 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF6S24140HSR3 功能描述:射頻MOSFET電源晶體管 2.4GHZ HV6 28W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6S24140HSR5 功能描述:射頻MOSFET電源晶體管 2.4GHZ HV6 28W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray