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參數(shù)資料
| 型號： | MRF6S23140HR3 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| 中文描述： | 射頻功率場效應(yīng)晶體管N溝道增強型MOSFET的外側(cè) |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 441K |
| 代理商： | MRF6S23140HR3 |
MRF6S23140HR3 MRF6S23140HSR3
3
RF Device Data
Freescale Semiconductor
Figure 1. MRF6S23140HR3(SR3) Test Circuit Schematic
Z10
Z11, Z13
Z12, Z14
Z15
Z16
Z17
Z18
PCB
0.193
″
x 1.170
″
Microstrip
0.712
″
x 0.095
″
Microstrip
0.098
″
x 0.095
″
Microstrip
0.115
″
x 0.550
″
Microstrip
0.250
″
x 0.110
″
Microstrip
0.539
″
x 0.068
″
Microstrip
0.956
″
x 0.068
″
Microstrip
Taconic RF-35, 0.030
″
,
ε
r
= 3.5
Z1
Z2
Z3
Z4
Z5, Z6
Z7
Z8
Z9
0.678
″
x 0.068
″
Microstrip
0.420
″
x 0.068
″
Microstrip
0.845
″
x 0.200
″
Microstrip
0.175
″
x 0.530
″
Microstrip
0.025
″
x 0.530
″
Microstrip
0.514
″
x 0.050
″
Microstrip
0.507
″
x 0.050
″
Microstrip
0.097
″
x 1.170
″
Microstrip
Z1
RF
INPUT
C1
Z2
Z3
Z4
Z5
Z6
DUT
Z9
C2
RF
OUTPUT
Z10
Z15
Z16
Z17
Z18
C9
B1
V
BIAS
V
SUPPLY
C11
+
C10
C12
+
R1
C3
Z7
Z8
C4
B2
C15
+
C14
C16
+
C13
C21
C22
C7
C23
C24
+
Z11
C6
Z12
C17
C18
C5
C19
C20
+
Z14
C8
Z13
Table 5. MRF6S23140HR3(SR3) Test Circuit Component Designations and Values
Part
B1, B2
Ferrite Beads, Short
C1, C2, C3, C4, C5, C6, C7, C8
5.6 pF 100B Chip Capacitors
C9, C13
0.01
μ
F, 100 V Chip Capacitors
C10, C14, C17, C21
2.2
μ
F, 50 V Chip Capacitors
C11, C15
22
μ
F, 25 V Tantalum Chip Capacitors
C12, C16
47
μ
F, 16 V Tantalum Chip Capacitors
C18, C19, C22, C23
10
μ
F, 50 V Chip Capacitors (2220)
C20, C24
330
μ
F, 63 V Electrolytic Capacitors
R1
10
Ω
, 1/8 W Chip Resistor (1206)
Description
Part Number
2743019447
100B5R6CP500X
C1825C103J1RAC
C1825C225J5RAC
ECS-T1ED226R
T491D476K016AS
GRM55DR61H106KA88B
NACZF331M63V
Manufacturer
Fair-Rite
ATC
Kemet
Kemet
Panasonic TE series
Kemet
Murata
Nippon
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6S23140HR5 | 功能描述:射頻MOSFET電源晶體管 HV6 2.3GHZ 28W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S23140HSR3 | 功能描述:射頻MOSFET電源晶體管 HV6 2.3GHZ 28W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S23140HSR5 | 功能描述:射頻MOSFET電源晶體管 HV6 2.3GHZ 28W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S24140H | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6S24140HR3 | 功能描述:射頻MOSFET電源晶體管 2.4GHZ HV6 W-CDMA NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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