- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359218 > MRF6S21140HSR3 (飛思卡爾半導(dǎo)體(中國)有限公司) N-Channel Enhancement-Mode Lateral MOSFETs PDF資料下載
參數(shù)資料
| 型號： | MRF6S21140HSR3 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | N-Channel Enhancement-Mode Lateral MOSFETs |
| 中文描述： | N溝道增強(qiáng)型MOSFET的外側(cè) |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 469K |
| 代理商： | MRF6S21140HSR3 |
MRF6S21140HR3 MRF6S21140HSR3
3
RF Device Data
Freescale Semiconductor
Figure 1. MRF6S21140HR3(HSR3) Test Circuit Schematic
Z8
Z9
Z10
Z11, Z12
Z13
PCB
0.531
″
x 1.000
″
Microstrip
0.308
″
x 0.083
″
Microstrip
0.987
″
x 0.083
″
Microstrip
0.070
″
x 0.220
″
Microstrip
0.160
″
x 0.083
″
Microstrip
Taconic TLX8-0300, 0.030
″
,
ε
r
= 2.55
Z1
Z2
Z3
Z4
Z5
0.250
″
x 0.083
″
Microstrip
1.177
″
x 0.083
″
Microstrip
0.443
″
x 0.083
″
Microstrip
0.276
″
x 0.787
″
Microstrip
0.786
″
x 0.083
″
Microstrip
(quarter wave length for bias purpose)
0.833
″
x 0.083
″
Microstrip
(quarter wave length for supply purpose)
Z6, Z7
C5
R2
V
BIAS
R1
Z5
C4
C3
R3
RF
INPUT
DUT
Z1
C1
C19
Z2
C2
Z3
Z4
C18
C6
C7
RF
OUTPUT
C10
C12
C13
C16
Z6
V
SUPPLY
Z8
C17
Z9
Z10
Z11
C8
C9
Z12
Z13
Z7
C11
C14
C15
+
Table 5. MRF6S21140HR3(HSR3) Test Circuit Component Designations and Values
Part
C1, C3, C8, C9, C10, C11
6.8 pF 100B Chip Capacitors
C2
0.8 pF 100B Chip Capacitor
C4
220 nF Chip Capacitor (1812)
C5, C12, C13, C14, C15
10
μ
F Chip Capacitors (2220)
C6, C19
0.2 pF 100B Chip Capacitors
C7
0.5 pF 100B Chip Capacitor
C16
220
μ
F, 63 V Electrolytic Capacitor, Radial
C17, C18
0.1 pF 100B Chip Capacitors
R1, R2
10 k , 1/4 W Chip Resistors (1206)
R3
10 , 1/4 W Chip Resistor (1206)
Description
Part Number
Manufacturer
ATC
ATC
Vishay-Vitramon
TDK
ATC
ATC
Philips
ATC
100B6R8CW
100B0R8BW
1812Y224KXA
C5750X5R1H106MT
100B0R2BW
100B0R5BW
13668221
100B0R1BW
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF6S23100H | RF Power Dield Effect Transistors |
| MRF6S23100HR3 | RF Power Dield Effect Transistors |
| MRF6S23100Hxx | RF Power Dield Effect Transistors |
| MRF6S23100HSR3 | RF Power Dield Effect Transistors |
| MRF6S23140HR3 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6S21140HSR5 | 功能描述:射頻MOSFET電源晶體管 HV6 LDMOS 30W NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S21190H | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6S21190HR3 | 功能描述:射頻MOSFET電源晶體管 HV6 2.1GHZ 54W NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S21190HR5 | 功能描述:射頻MOSFET電源晶體管 HV6 2.1GHZ 54W NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S21190HSR3 | 功能描述:射頻MOSFET電源晶體管 HV6 2.1GHZ 54W NI880S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。