參數(shù)資料
型號(hào)： MRF6S20010GNR1
廠商： 飛思卡爾半導(dǎo)體(中國(guó))有限公司
英文描述： RF Power Field Effect Transistors
中文描述： 射頻功率場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù)： 23/24頁(yè)
文件大?。?/td> 591K
代理商： MRF6S20010GNR1
MRF6S20010NR1 MRF6S20010GNR1
23
RF Device Data
Freescale Semiconductor
TO-270-2 GULL
PLASTIC
MRF6S20010GNR1
CASE 1265A-02
ISSUE B
BOTTOM VIEW
2X
E4
E
D1
E1
D2
E3
A2
EXPOSED
HEATSINK AREA
A
B
D
H
PIN ONE ID
D
A
M
aaa
C
A
M
aaa
C
b1
D3
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M1994.
3. DATUM PLANE H IS LOCATED AT TOP OF LEAD
AND IS COINCIDENT WITH THE LEAD WHERE
THE LEAD EXITS THE PLASTIC BODY AT THE
TOP OF THE PARTING LINE.
4. DIMENSIONS
D1" AND
E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS
D1" AND
E1" DO
INCLUDE MOLD MISMATCH AND ARE DETER
MINED AT DATUM PLANE H.
5. DIMENSION b1 DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE b1 DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS A AND B TO BE DETERMINED AT
DATUM PLANE H.
7. DIMENSIONS
D" AND
“
E2" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .003 PER SIDE. DIMENSIONS
“
D" AND
“
E2" DO
INCLUDE MOLD MISMATCH AND ARE DETER
MINED AT DATUM PLANE D.
c1
E2
E5
A
DIM
A
A1
A2
D
D1
D2
D3
E
E1
E2
E3
E4
E5
MIN
.078
.001
.077
.416
.378
.290
.016
.316
.238
.066
.150
.058
.231
MAX
.082
.004
.088
.424
.382
.320
.024
.324
.242
.074
.180
.066
.235
MIN
1.98
0.02
1.96
10.57
9.60
7.37
0.41
8.03
6.04
1.68
3.81
1.47
5.87
MAX
2.08
0.10
2.24
10.77
9.70
8.13
0.61
8.23
6.15
1.88
4.57
1.68
5.97
MILLIMETERS
INCHES
L1
b1
c1
e
.193
.007
2
.199
.011
8
4.90
0.18
2
5.06
0.28
8
aaa
.01 BSC
.004
0.25 BSC
0.10
PIN 1
PIN 2
PIN 3
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
L
.018
.024
4.90
5.06
°
°
°
°
DETAIL Y
SEATING
PLANE
B
M
bbb
C
L1
L
A1
PLANE
e
DETAIL Y
E5
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF6S20010GNR1-CUT TAPE 制造商:Freescale 功能描述:MRF6S20010 Series 1.6 to 2.2 GHz 28 V 10 W RF Power N-Ch Mosfet - TO-270
MRF6S20010NR1 功能描述:射頻MOSFET電源晶體管 HV6 2GHZ 10W TO270-2 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6S20010NR1_09 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S21050LR3 功能描述:射頻MOSFET電源晶體管 HV6 W-CDMA 11.5W NI400L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6S21050LR3_08 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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