參數(shù)資料
型號: MRF6S18140HR3
廠商: 飛思卡爾半導體(中國)有限公司
英文描述: RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
中文描述: 射頻功率場效應晶體管N溝道增強型MOSFET的外側(cè)
文件頁數(shù): 9/12頁
文件大?。?/td> 417K
代理商: MRF6S18140HR3
MRF6S18140HR3 MRF6S18140HSR3
9
RF Device Data
Freescale Semiconductor
Z
o
= 10
Ω
Z
load
f = 1920 MHz
Z
source
f = 1760 MHz
f = 1760 MHz
f = 1920 MHz
V
DD
= 28 Vdc, I
DQ
= 1200 mA, P
out
= 29 W Avg.
f
MHz
Z
source
Z
load
1760
1.454 - j6.703
1.344 - j2.479
1780
1800
1.465 - j6.511
1.467 - j6.336
1.338 - j2.299
1.333 - j2.129
1820
1.448 - j6.193
1.325 - j1.966
1840
1.440 - j6.049
1.308 - j1.801
1860
1.414 - j5.938
1.301 - j1.687
1880
1.377 - j5.827
1.303 - j1.550
1900
1.311 - j5.710
1.301 - j1.419
1920
1.231 - j5.583
1.289 - j1.303
Z
source
=
Test circuit impedance as measured from
gate to ground.
Z
load
=
Test circuit impedance as measured
from drain to ground.
Figure 16. Series Equivalent Source and Load Impedance
Zsource
Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF6S18140HR3_09 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S18140HR5 功能描述:射頻MOSFET電源晶體管 1.8GHZ 28V 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6S18140HSR3 功能描述:射頻MOSFET電源晶體管 1.8GHZ 28V 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6S18140HSR5 功能描述:射頻MOSFET電源晶體管 1.8GHZ 28V 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6S1900HSR3 制造商:Freescale Semiconductor 功能描述: