參數(shù)資料
型號(hào)： MRF6S18140HR3
廠(chǎng)商： 飛思卡爾半導(dǎo)體(中國(guó))有限公司
英文描述： RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
中文描述： 射頻功率場(chǎng)效應(yīng)晶體管N溝道增強(qiáng)型MOSFET的外側(cè)
文件頁(yè)數(shù)： 2/12頁(yè)
文件大?。?/td> 417K
代理商： MRF6S18140HR3
2
RF Device Data
Freescale Semiconductor
MRF6S18140HR3 MRF6S18140HSR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
2 (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
IV (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68
Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
10
μ
Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28
Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
1
μ
Adc
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
—
—
1
μ
Adc
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 300
μ
Adc)
V
GS(th)
1.2
2
2.7
Vdc
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 1200
mAdc, Measured in Functional Test)
V
GS(Q)
2
2.7
3.8
Vdc
Drain-Source On-Voltage
(V
GS
= 10 Vdc, I
D
= 3 Adc)
V
DS(on)
0.1
0.22
0.3
Vdc
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
2.2
—
pF
Output Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
oss
—
685
—
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1200 mA, P
out
= 29 W Avg., f1 = 1805 MHz,
f2 = 1807.5 MHz and f1 = 1877.5 MHz, f2 = 1880 MHz, 2-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in
30 kHz Channel Bandwidth @
±
885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @
±
2.5 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
Power Gain
G
ps
15
16
18
dB
Drain Efficiency
η
D
25.5
27.5
—
%
Intermodulation Distortion
IM3
—
-36
-34.5
dBc
Adjacent Channel Power Ratio
ACPR
—
-50.5
-48
dBc
Input Return Loss
IRL
—
-10.5
—
dB
1. Part internally matched both on input and output.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF6S18140HR3_09 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S18140HR5 功能描述:射頻MOSFET電源晶體管 1.8GHZ 28V 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6S18140HSR3 功能描述:射頻MOSFET電源晶體管 1.8GHZ 28V 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6S18140HSR5 功能描述:射頻MOSFET電源晶體管 1.8GHZ 28V 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6S1900HSR3 制造商:Freescale Semiconductor 功能描述:
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