參數(shù)資料
型號(hào)： MRF6P21190HR6
廠商： 飛思卡爾半導(dǎo)體(中國(guó))有限公司
英文描述： RF Power Field Effect Transistor, N-Channel Enhancement-Mode Lateral MOSFET
中文描述： RF功率場(chǎng)效應(yīng)晶體管，N溝道增強(qiáng)型MOSFET的側(cè)向
文件頁(yè)數(shù)： 7/12頁(yè)
文件大小： 400K
代理商： MRF6P21190HR6
MRF6P21190HR6
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
210
10
10
10
9
10
8
10
7
110
130
150
170
190
90
100
120
T
J
, JUNCTION TEMPERATURE (
°
C)
140
160
180
200
Figure 12. MTTF Factor versus Junction Temperature
This above graph displays calculated MTTF in hours x ampere
2
drain current. Life tests at elevated temperatures have correlated to
better than
±
10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
D2
for MTTF in a particular application.
M
2
)
W-CDMA TEST SIGNAL
10
0.0001
100
0
PEAKTOAVERAGE (dB)
Figure 13. CCDF W-CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single-Carrier Test Signal
10
1
0.1
0.01
0.001
2
4
6
8
Figure 14. 2-Carrier W-CDMA Spectrum
f, FREQUENCY (MHz)
3.84 MHz
Channel BW
IM3 @
3.84 MHz BW
+IM3 @
3.84
MHz BW
ACPR @
3.84 MHz BW
+ACPR @
3.84 MHz BW
P
(
+20
+30
0
10
40
50
60
70
80
20
20
5
15
10
0
5
10
15
20
25
25
30
WCDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @ +5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @ +10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF6P21190HR6_06 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6P21190HR6_10 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
MRF6P23190H_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
MRF6P23190HR5 功能描述:射頻MOSFET電源晶體管 HV6 2.3GHZ 40W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6P23190HR6 功能描述:射頻MOSFET電源晶體管 HV6 2.3GHZ 40W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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