參數(shù)資料
型號: MRF6P21190HR6
廠商: 飛思卡爾半導體(中國)有限公司
英文描述: RF Power Field Effect Transistor, N-Channel Enhancement-Mode Lateral MOSFET
中文描述: RF功率場效應晶體管,N溝道增強型MOSFET的側(cè)向
文件頁數(shù): 3/12頁
文件大?。?/td> 400K
代理商: MRF6P21190HR6
MRF6P21190HR6
3
RF Device Data
Freescale Semiconductor
Figure 1. MRF6P21190HR6 Test Circuit Schematic
Z15, Z16
Z17, Z18
Z19, Z20
Z21
Z22
Z23
Z24
PCB
0.289
x 0.712
Microstrip
0.127
x 0.200
Microstrip
0.288
x 0.067
Microstrip
0.088
x 0.067
Microstrip
1.830
x 0.067
Microstrip
1.140
x 0.114
Microstrip
0.850
x 0.066
Microstrip
Taconic RF-35, 0.030
,
ε
r
= 3.5
Z1
Z2
Z3
Z4
Z5, Z6
Z7, Z8
Z9, Z10
Z11, Z12
Z13, Z14
0.850
x 0.067
Microstrip
1.140
x 0.114
Microstrip
1.830
x 0.067
Microstrip
0.088
x 0.067
Microstrip
0.250
x 0.067
Microstrip
0.324
x 0.178
Microstrip
0.143
x 0.655
Microstrip
0.111
x 0.655
Microstrip
0.124
x 0.712
Microstrip
RF
INPUT
C3
R1
C4
+
C2
V
BIAS
R2
B2
B1
C5
C6
+
Z6
Z8
Z10
Z12
C1
Z5
Z7
Z9
Z11
C7
Z1
Z2
Z3
DUT
C9
R3
C10
+
C8
R4
B4
B3
C11
C12
+
C14
+
C15
C19
C16
C17
C18
+
C20
+
C21
+
V
SUPPLY
Z14
Z16
Z18
Z20
C13
Z13
Z15
Z17
Z19
C22
C23
+
C24
C28
C25
C26
C27
+
C29
+
C30
+
V
SUPPLY
RF
OUTPUT
Z23
Z24
V
BIAS
Z4
Z22
Z21
Table 5. MRF6P21190HR6 Test Circuit Component Designations and Values
Part
B1, B2, B3, B4
RF Beads
C1, C7
30 pF Chip Capacitors
C2, C8, C15, C24
6.8 pF Chip Capacitors
C3, C9, C18, C27
1k pF Chip Capacitors
C4, C10
1
μ
F, 50 V Tantalum Chip Capacitors
C5, C11, C17, C26
0.1
μ
F Chip Capacitors
C6, C12
100
μ
F, 50 V Electrolytic Capacitors, Radial
C13, C22
43 pF Chip Capacitors
C14, C19, C20, C23,
C28, C29
0.56
μ
F Chip Capacitors (1825)
C21, C30
470
μ
F, 63 V Electrolytic Capacitors, Radial
R1, R3
1 k , 1/4 W Chip Resistors (1206)
R2, R4
12 , 1/4 W Chip Resistors (1206)
Description
Part Number
Manufacturer
Fair-Rite
ATC
ATC
ATC
Kemet
Kemet
Multicomp
ATC
Kemet
2743019447
100B300JP500X
100B6R8CP500X
100B102JP50X
T491C105K050AS
CDR33BX104AKWS
MCR50V107M8X11
100B430JP500X
T491X226K035AS
22
μ
F, 35 V Tantalum Chip Capacitors
C16, C25
C1825C564J5RAC
MCR63V477M13X26
CRCW12061001F100
CRCW120612R0F100
Kemet
Multicomp
Vishay
Vishay
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參數(shù)描述
MRF6P21190HR6_06 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6P21190HR6_10 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
MRF6P23190H_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
MRF6P23190HR5 功能描述:射頻MOSFET電源晶體管 HV6 2.3GHZ 40W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6P23190HR6 功能描述:射頻MOSFET電源晶體管 HV6 2.3GHZ 40W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray