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參數(shù)資料
| 型號(hào)： | MRF5S9101NBR1 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國(guó))有限公司 |
| 英文描述： | RF Power Field Effect Transistors |
| 中文描述： | 射頻功率場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 9/16頁(yè) |
| 文件大?。?/td> | 463K |
| 代理商： | MRF5S9101NBR1 |
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MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1
9
RF Device Data
Freescale Semiconductor
Figure 14. MRF5S9101NR1(NBR1)/MR1(MBR1) 800 MHz Test Circuit Schematic
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
0.432
″
x 0.827
″
Microstrip
0.720
″
x 0.788
″
Microstrip
0.195
″
x 0.087
″
Microstrip
0.584
″
x 0.087
″
Microstrip
0.173
″
x 0.087
″
Microstrip
0.560
″
x 0.087
″
Microstrip
0.378
″
x 0.827
″
Microstrip
0.279
″
x 0.087
″
Microstrip
0.193
″
x 0.087
″
Microstrip
Z10
Z11
Z12, Z13*
0.897
″
x 0.087
″
Microstrip
1.161
″
x 0.087
″
Microstrip
1.6
″
x 0.089
″
Microstrip
(quarter wave length for supply purpose)
1.2
″
x 0.059
″
Microstrip
(quarter wave length for bias purpose)
Taconic TLX8-0300, 0.030
″
,
ε
r
= 2.55
Z14*
PCB
*Variable for tuning
RF
INPUT
RF
OUTPUT
C1
C10
V
SUPPLY
Z6
V
BIAS
Z11
C11
C21
+
C7
C19
C8
C2
C5
Z2
C13
C16
C12
Z1
DUT
Z8
R1
C4
R2
Z14
R3
C17
Z12
C9
C3
C6
Z13
C14
C15
C22
Z3
Z5
Z4
C18
C20
Z7
Z10
Z9
Table 7. MRF5S9101NR1(NBR1)/MR1(MBR1) 800 MHz Test Circuit Component Designations and Values
Part
Description
C1, C2, C3
4.7 F Chip Capacitors (2220)
C4, C5, C6
10 nF 200B Chip Capacitors
C7, C8, C9
33 pF 100B Chip Capacitors
C10, C11
22 pF 100B Chip Capacitors
C12, C13, C17
10 pF 100B Chip Capacitors
C14, C15
8.2 pF 100B Chip Capacitors
C16, C22
6.8 pF 100B Chip Capacitors
C18
5.6 pF 100B Chip Capacitor
C19, C20
2.7 pF 100B Chip Capacitors
C21
220 F, 50 V Electrolytic Capacitor, Axial
R1, R2
10 k , 1/4 W Chip Resistors (1206)
R3
10 , 1/4 W Chip Resistor (1206)
Part Number
Manufacturer
Murata
ATC
ATC
ATC
ATC
ATC
ATC
ATC
ATC
Sprague
GRM55ER7H475KA01
200B103MW
100B330JW
100B220GW
100B100GW
100B8R2CW
100B6R8CW
100B5R6CW
100B2R7BW
516D227M050NP7B
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF5S9101NR1 | 功能描述:射頻MOSFET電源晶體管 100W 900MHZ26V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5S9150HR3 | 功能描述:射頻MOSFET電源晶體管 HV5 900MHZ 150W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5S9150HR3_09 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF5S9150HR5 | 功能描述:射頻MOSFET電源晶體管 HV5 900MHZ 150W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5S9150HSR3 | 功能描述:射頻MOSFET電源晶體管 HV5 900MHZ 150W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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