參數(shù)資料
型號(hào)： MRF5S9100NR1
廠商： 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述： CAP 0.1UF 100V 10% X7R AXIAL TR-14
中文描述： N溝道增強(qiáng)型MOSFET的外側(cè)
文件頁數(shù)： 1/12頁
文件大?。?/td> 442K
代理商： MRF5S9100NR1
MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large-signal, common-source amplifier
applications in 26 volt base station equipment.
Typical Single-Carrier N-CDMA Performance @ 880 MHz, V
DD
= 26 Volts,
I
DQ
= 950 mA, P
out
= 20 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 19.5 dB
Drain Efficiency — 28%
ACPR @ 750 kHz Offset — -46.8 dBc @ 30 kHz Bandwidth
Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 100 Watts CW
Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 V
DD
Operation
Integrated ESD Protection
N Suffix Indicates Lead-Free Terminations
200
°
C Capable Plastic Package
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
- 0.5, +68
Vdc
Gate-Source Voltage
V
GS
- 0.5, +15
Vdc
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
336
1.92
W
W/
°
C
Storage Temperature Range
T
stg
- 65 to +150
°
C
Operating Junction Temperature
T
J
200
°
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80
°
C, 20 W CW
R
θ
JC
0.52
°
C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Document Number: MRF5S9100
Rev. 3, 7/2005
Freescale Semiconductor
Technical Data
880 MHz, 20 W AVG., 26 V
SINGLE N-CDMA
LATERAL N-CHANNEL
RF POWER MOSFETs
MRF5S9100NR1
MRF5S9100NBR1
MRF5S9100MR1
MRF5S9100MBR1
CASE 1486-03, STYLE 1
TO-270 WB-4
PLASTIC
MRF5S9100NR1(MR1)
CASE 1484-02, STYLE 1
TO-272 WB-4
PLASTIC
MRF5S9100NBR1(MBR1)
Freescale Semiconductor, Inc., 2005. All rights reserved.
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