參數(shù)資料
型號(hào)： MJE5852
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： PNP SILICON POWER TRANSISTORS
中文描述： 8 A, 400 V, PNP, Si, POWER TRANSISTOR, TO-220AB
封裝： CASE 221A-09, 3 PIN
文件頁數(shù)： 2/4頁
文件大?。?/td> 71K
代理商： MJE5852
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
1.56
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CES
Collector Cut-off
Current (V
BE
= -1.5V)
Emitter Cut-off Current
(I
C
= 0)
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
(I
B
=0)
V
CE(sat)
Collector-Emitter
Saturation Voltage
V
BE(sat)
Base-Emitter
Saturation Voltage
h
FE
DC Current Gain
V
CE
= 450 V
500
μ
A
I
EBO
V
EB
= 6 V
1
mA
I
C
= 10 mA
400
V
I
C
= 4 A I
B
= 1 A
I
C
= 8 A I
B
= 3 A
I
C
= 4 A I
B
= 1 A
2
5
V
V
1.5
V
I
C
= 2 A V
CE
= 5 V
I
C
= 5 A V
CE
= 5 V
15
5
t
s
t
f
RESISTIVE LOAD
Storage Time
Fall Time
I
C
= 4 A V
CC
= 250 V
I
B1
= -I
B2
= 1 A t
p
= 40
μ
s
2
0.5
μ
s
μ
s
Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
For PNP type voltage and current values are negative.
MJE5852
2/4
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJE5852_03 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH VOLTAGE PNP POWER TRANSISTOR
MJE5852G 功能描述:兩極晶體管 - BJT 8A 400V 80W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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