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  • 參數(shù)資料
    型號: MJE3055
    廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
    英文描述: NPN (GENERAL PURPOSE AND SWITCHING APPLICATIONS)
    中文描述: npn型(通用和交換應(yīng)用)
    文件頁數(shù): 1/4頁
    文件大小: 65K
    代理商: MJE3055
    MJE2955T
    MJE3055T
    COMPLEMENTARY SILICON POWER TRANSISTORS
    I
    SGS-THOMSON PREFERRED SALESTYPES
    I
    COMPLEMENTARY PNP - NPN DEVICES
    DESCRIPTION
    The MJE3055T is a silicon epitaxial-base NPN
    transistor in Jedec TO-220 package. It is
    intended for power switching circuits and
    general-purpose amplifiers. The complementary
    PNP type is MJE2955T.
    INTERNAL SCHEMATIC DIAGRAM
    June 1997
    ABSOLUTE MAXIMUM RATINGS
    Symbol
    V
    CEO
    V
    CBO
    V
    EBO
    I
    C
    I
    B
    P
    tot
    T
    stg
    T
    j
    For PNP types voltage and current values are negative.
    Parameter
    Value
    60
    70
    5
    10
    6
    75
    -55 to 150
    150
    Unit
    V
    V
    V
    A
    A
    W
    o
    C
    o
    C
    Collector-Emitter Voltage (I
    B
    = 0)
    Collector-Base Voltage (I
    E
    = 0)
    Emitter-Base Voltage (I
    C
    = 0)
    Collector Current
    Base Current
    Total Power Dissipation at T
    case
    25
    o
    C
    Storage Temperature
    Max. Operating Junction Temperature
    1
    2
    3
    TO-220
    1/4
    相關(guān)PDF資料
    PDF描述
    MJE3055T SILICON EPITAXIAL PLANAR TRANSISTOR
    MJE3055 SILICON EPITAXIAL PLANAR TRANSISTOR
    MJE340 COMPLEMETARY SILICON POWER TRANSISTORS
    MJE340 0.5 AMPERE POWER TRANSISTOR NPN SILICON 300 VOLTS 20 WATTS
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    相關(guān)代理商/技術(shù)參數(shù)
    參數(shù)描述
    MJE3055T 功能描述:兩極晶體管 - BJT NPN Gen Pur Switch RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
    MJE3055T 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN TO-220
    MJE3055T_09 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH VOLTAGE TRANSISTOR
    MJE3055TG 功能描述:兩極晶體管 - BJT 10A 60V 125W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
    MJE3055TG-TA3-T 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH VOLTAGE TRANSISTOR