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參數(shù)資料
| 型號： | 934051080115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, EMT3, SMD, SC-75, SMPAK-3 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大小： | 78K |
| 代理商： | 934051080115 |
2000 Nov 15
3
Philips Semiconductors
Product specication
PNP general purpose transistors
BC856T; BC857T series
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulse test: tp ≤ 300 s; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
in free air; note 1
833
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector-base cut-off current VCB = 30 V; IE =0
15
nA
VCB = 30 V; IE = 0; Tj = 150 °C
5
A
IEBO
emitter cut-off current
VEB = 5 V; IC =0
100
nA
hFE
DC current gain
VCE = 5 V; IC = 2mA
BC856AT; BC857AT
125
250
BC856BT; BC857BT
220
475
BC857CT
420
800
VCEsat
collector-emitter saturation
voltage
IC = 10 mA; IB = 0.5 mA
200
mV
IC = 100 mA; IB = 5 mA; note 1
400
mV
VBE
base-emitter voltage
IC = 2 mA; VCE = 5V
580
700
mV
IC = 10 mA; VCE = 5V
770
mV
Cc
collector capacitance
VCB = 10 V; f = 1 MHz; IE =ie =0
2.5
pF
Ce
emitter capacitance
VEB = 0.5 V; f = 1 MHz; IC =ic =0
10
pF
fT
transition frequency
IC = 10 mA; VCE = 5V;
f = 100 MHz
100
MHz
F
noise gure
IC = 200 A; VCE = 5V;
RS =2k; f = 1 kHz; B = 200 Hz
10
dB
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