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參數(shù)資料
| 型號： | MCM69D618TQ6 |
| 廠商： | MOTOROLA INC |
| 元件分類： | DRAM |
| 英文描述： | 64K x 18 Bit Synchronous Dual I/O, Dual Address SRAM |
| 中文描述： | 64K X 18 DUAL-PORT SRAM, 6 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁數(shù)： | 16/16頁 |
| 文件大?。?/td> | 175K |
| 代理商： | MCM69D618TQ6 |
MCM69F817
9
MOTOROLA FAST SRAM
OUTPUT
Z0 = 50
RL = 50
1.5 V
Figure 2. AC Test Load
2.4
INPUT
WAVEFORM
tr
TEST POINT
OUTPUT
BUFFER
2.4
0.4
OUTPUT
WAVEFORM
OUTPUT LOAD
tf
UNLOADED RISE AND FALL TIME MEASUREMENT
NOTES:
1. Input waveform has a slew rate of 1 V/ns.
2. Rise time is measured from 0.4 to 2.4 V unloaded.
3. Fall time is measured from 2.4 to 0.4 V unloaded.
Figure 3. Unloaded Rise and Fall Time Characterization
2.4
0.4
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| MCM69D618TQ6R | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:64K x 18 Bit Synchronous Dual I/O, Dual Address SRAM |
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