STATIC ELECTRICAL CHARACTERISTICS Reset thre" />
參數(shù)資料
型號： MC33889BDWR2
廠商： Freescale Semiconductor
文件頁數(shù)： 2/59頁
文件大小： 0K
描述： IC SYSTEM BASE W/CAN 28-SOIC
標準包裝： 1,000
控制器類型： 系統(tǒng)基礎(chǔ)芯片
接口： CAN
電源電壓： 5.5 V ~ 18 V
電流 - 電源： 45mA
工作溫度： -40°C ~ 125°C
安裝類型： 表面貼裝
封裝/外殼： 28-SOIC（0.295"，7.50mm 寬）
供應(yīng)商設(shè)備封裝： 28-SOIC W
包裝： 帶卷 (TR)
Analog Integrated Circuit Device Data
10
Freescale Semiconductor
33889
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Reset threshold 1
Default value after reset. (15)
VRST-TH1
4.5
4.6
4.7
V
Reset threshold 2 (15)
VRST-TH2
4.1
4.2
4.3
V
Reset duration
RESET-DUR
0.85
1.0
2.0
ms
VDD1 range for Reset Active
VDD
1.0
-
V
Reset Delay Time
Measured at 50% of reset signal. (16)
tD
5.0
-
20
s
Line Regulation
9.0 V < VSUP < 18 V, IDD = 10 mA
LR1
-
5.0
25
mV
Line Regulation
5.5 V < VSUP < 27 V, IDD = 10 mA
LR2
-
10
25
mV
Load Regulation
1.0 mA < IIDD < 200 mA
LD
-
25
75
mV
Thermal stability
VSUP = 13.5 V, I = 100 mA
THERMS
-
5.0
-
mV
V2 REGULATOR (V2) (17)
V2 Output Voltage
I2 from 2.0 to 200 mA, 5.5 V < VSUP < 27 V
V2
0.99
1.0
1.01
VDD1
I2 output current (for information only)
Depending on the external ballast transistor
I2
200
-
mA
V2 CTRL sink current capability
I2CTRL
10
-
mA
V2LOW flag threshold
V2LTH
3.75
4.0
4.25
V
Internal V2 Supply Current (CAN and SBC in Normal Mode).
TX = 5.0 V, CAN in Recessive State
IV2RS
3.8
5.6
6.8
mA
Internal V2 Supply Current (CAN and SBC in Normal Mode).
TX = 0.0 V, No Load, CAN in Dominant State
IV2DS
4.0
5.8
7.0
mA
Internal V2 Supply Current (CAN in Receive Only Mode, SBC
in Normal mode). VSUP = 12 V
IV2R
80
120
A
Internal V2 Supply Current (CAN in Bus TermVbat mode, SBC
in normal mode), VSUP = 12 V
IV2BT
35
60
A
Notes
15.
Selectable by SPI
16.
Guaranteed by design
17.
V2 TRACKING VOLTAGE REGULATOR - V2 specification with external capacitor
- option 1: C
22 F and ESR < 10 ohm. Using a resistor of 2 kohm or less between the base and emitter of the external PNP is
recommended.
- option2: 1.0
F < C < 22 F and ESR < 10 ohm. In this case depending on the ballast transistor gain an additional resistor and capacitor
network between emitter and base of PNP ballast transistor might be required. Refer to Freescale application information or contact
your local technical support.
- option 3: 10 uF < C < 22
F ESR > 0.2 ohms: a resistor of 2 kohm or less is required between the base and emitter of the external PNP.
Table 4. Static Electrical Characteristics (continued).
Characteristics noted under conditions - VSUP From 5.5 V to 18 V and TJ from -40 to 125 °C, unless otherwise noted. Typical
values noted reflect the approximate parameter means at TA = 25 °C under nominal conditions unless otherwise noted.
Description
Symbol
Min
Typ
Max
Unit
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