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參數(shù)資料
| 型號(hào)： | M48T212A |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 3.3V TIMEKEEPER CONTROLLER |
| 中文描述： | 3.3計(jì)時(shí)控制器 |
| 文件頁(yè)數(shù)： | 5/20頁(yè) |
| 文件大?。?/td> | 165K |
| 代理商： | M48T212A |
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M48T212A
Table 6. Capacitance
(1)
(T
A
= 25 °C, f = 1 MHz)
Symbol
Note: 1. Sampled only, not 100% tested.
2. Outputs deselected.
Table 7. DC Characteristics
(T
A
= 0 to 70°C; V
CC
= 3V to 3.6V)
Symbol
Note: 1. Outputs deselected.
2. RSTIN1 and RSTIN2 internally pulled-up to V
CC
through 100K
resistor. WDI internally pulled-down to V
SS
through 100K
resistor.
3. For IRQ/FT & RST pins (Open Drain).
4. Conditioned outputs (E1
CON
- E2
CON
) can only sustain CMOS leakage currents in the battery back-up mode. Higher leakage cur-
rents will reduce battery life.
5. External SRAM must match TIMEKEEPER Controller chip V
CC
specification.
6. When fully charged.
Parameter
Test Condition
Min
Max
Unit
C
IN
Input Capacitance
V
IN
= 0V
10
pF
C
OUT (2)
Input/Output Capacitance
V
OUT
= 0V
10
pF
Parameter
Test Condition
Min
Typ
Max
Unit
I
LI
(1,2)
Input Leakage Current
0V
≤
V
IN
≤
V
CC
±1
μA
I
LO
(1)
Output Leakage Current
0V
≤
V
OUT
≤
V
CC
±1
μA
I
CC
Supply Current
Outputs Open
4
10
mA
I
CC1
Supply Current (Standby) TTL
E = V
IH
3
mA
I
CC2
Supply Current (Standby) CMOS
E = V
CC
–0.2
2
mA
I
BAT
Battery Current OSC ON
575
800
nA
Battery Current OSC OFF
100
nA
V
IL
Input Low Voltage
–0.3
0.8
V
V
IH
Input High Voltage
2.0
V
CC
+ 0.3
V
V
OL
Output Low Voltage
I
OL
= 2.1mA
0.4
V
Output Low Voltage (open drain)
(3)
I
OL
= 10mA
0.4
V
V
OH
Output High Voltage
I
OH
= –1.0mA
2.4
V
V
OHB
(4)
V
OH
Battery Back-up
I
OUT2
= –1.0μA
2.0
3.6
V
I
OUT1
(5)
V
OUT
Current (Active)
V
OUT1
> V
CC
–0.3
70
mA
I
OUT2
V
OUT
Current (Battery Back-up)
V
OUT2
> V
BAT
–0.3
100
μA
V
PFD
Power-fail Deselect Voltage
2.7
2.9
3.0
V
V
SO
Battery Back-up Switchover Voltage
V
PFD
–100mV
V
V
BAT
Battery Voltage
3.0
V
V
CAP
Capacitor Voltage
(6)
V
CC
V
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