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參數(shù)資料
| 型號： | M36D0R6040B0ZAIT |
| 廠商： | 意法半導體 |
| 英文描述： | 64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package |
| 中文描述： | 64兆位（4Mb的x16插槽，多銀行，頁）閃存和16兆位（最快1Mb × 16）移動存儲芯片，多芯片封裝 |
| 文件頁數(shù)： | 14/18頁 |
| 文件大?。?/td> | 329K |
| 代理商： | M36D0R6040B0ZAIT |
M36D0R6040T0, M36D0R6040B0
14/18
Table 9. PSRAM DC Characteristics
Symbol
Parameter
Note: 1. The maximum DC voltage on input and I/O pins is V
DDP
+0.2V. During voltage transitions, inputs may overshoot V
DDP
by 1.0V for
periods of up to 5ns.
2. The minimum DC voltage on input or I/O pins is –0.3V. During voltage transitions, inputs may undershoot V
SS
by 1.0V for periods
of up to 5ns.
Test Condition
Min
Max
Unit
I
CC1
V
CC
Active Current
V
DDP
= 1.95V,
V
IN
= V
IH
or V
IL
,
E1
P
= V
IL
and E2
P
= V
IH
,
I
OUT
= 0mA
t
AVAV
Read /
t
AVAV
Write =
minimum
20
mA
I
CC2
t
AVAV
Read /
t
AVAV
Write =
maximum
3
mA
I
LI
Input Leakage Current
0V
≤
V
IN
≤
V
DDP
–1
1
μA
I
LO
Output Leakage Current
0V
≤
V
OUT
≤
V
DDP
–1
1
μA
I
PD
Deep Power Down Current
V
DDP
= 1.95V,
E1
P
≥
V
DDP
– 0.2V or E1
P
≤
V
IL
,
V
IN
≥
V
DDP
– 0.2V or V
IN
≤
0.2V
10
μA
I
SB
Standby Supply Current
CMOS
V
DDP
= 1.95V,
E1
P
= E2
P
≥
V
DDP
– 0.2V,
I
OUT
= 0mA
110
μA
V
IH (1)
Input High Voltage
0.8V
DDP
V
DDP
+
0.2
V
V
IL (2)
Input Low Voltage
–0.3
0.4
V
V
OH
Output High Voltage
I
OH
= –0.5mA
V
DDP
– 0.2
V
V
OL
Output Low Voltage
I
OL
= 1mA
0.2
V
相關PDF資料 |
PDF描述 |
|---|---|
| M36D0R6040T0ZAI | 64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package |
| M36D0R6040T0 | 64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package |
| M36D0R6040B0ZAIE | 64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package |
| M36D0R6040T0ZAIE | Circular Connector; No. of Contacts:26; Series:MS27473; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:16; Circular Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:16-26 RoHS Compliant: No |
| M36D0R6040T0ZAIT | 64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M36D0R6040T0 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package |
| M36D0R6040T0ZAI | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package |
| M36D0R6040T0ZAIE | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package |
| M36D0R6040T0ZAIF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package |
| M36D0R6040T0ZAIT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package |
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