參數(shù)資料
型號(hào): M29DW640F70N6F
廠商: STMICROELECTRONICS
元件分類(lèi): PROM
英文描述: 4M X 16 FLASH 3V PROM, 70 ns, PDSO48
封裝: 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48
文件頁(yè)數(shù): 58/74頁(yè)
文件大?。?/td> 556K
代理商: M29DW640F70N6F
M29DW640F
Common Flash Interface (CFI)
Table 27.
CFI Query System Interface Information
Address
Data
Description
Value
x16
x8
1Bh
36h
0027h
VCC Logic Supply Minimum Program/Erase voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 mV
2.7V
1Ch
38h
0036h
VCC Logic Supply Maximum Program/Erase voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 mV
3.6V
1Dh
3Ah
00B5h
VPP [Programming] Supply Minimum Program/Erase voltage
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 mV
11.5V
1Eh
3Ch
00C5h
VPP [Programming] Supply Maximum Program/Erase voltage
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 mV
12.5V
1Fh
3Eh
0004h
Typical timeout per single Byte/Word program = 2n s
16s
20h
40h
0000h
Typical timeout for minimum size write buffer program = 2n s
NA
21h
42h
000Ah
Typical timeout per individual block erase = 2n ms
1s
22h
44h
0000h
Typical timeout for full Chip Erase = 2n ms
NA
23h
46h
0004h
Maximum timeout for Byte/Word program = 2n times typical
256 s
24h
48h
0000h
Maximum timeout for write buffer program = 2n times typical
NA
25h
4Ah
0003h
Maximum timeout per individual block erase = 2n times typical
8s
26h
4Ch
0000h
Maximum timeout for Chip Erase = 2n times typical
NA
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