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參數(shù)資料
| 型號： | LN52 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 紅外LED |
| 英文描述： | GaAs Infrared Light Emitting Diode |
| 中文描述： | 4.2 mm, 1 ELEMENT, INFRARED LED, 950 nm |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 44K |
| 代理商： | LN52 |
1
Infrared Light Emitting Diodes
LN52
GaAs Infrared Light Emitting Diode
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Symbol
P
D
I
F
I
FP*
V
R
T
opr
T
stg
Ratings
160
100
2
3
–25 to +85
–30 to +100
Unit
mW
mA
A
V
C
C
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
*
f = 100 Hz, Duty cycle = 0.1 %
10
2.54
±
0.25
1
2
2-0.45
±
0.05
0
±
0
2
±
0
3
±
0
1
Unit : mm
10
±
01
4
±
3
1: Cathode
2: Anode
+
–
+
–
+015
–01
Electro-Optical Characteristics
(Ta = 25C)
Parameter
Symbol
P
O
λ
P
λ
V
F
I
R
C
t
t
r
t
f
θ
Conditions
min
3.5
typ
6
950
50
1.25
max
Unit
mW
nm
nm
V
μ
A
pF
μ
s
μ
s
deg.
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
Rise time
Fall time
Half-power angle
I
F
= 100mA
I
F
= 100mA
I
F
= 100mA
I
F
= 100mA
V
R
= 3V
V
R
= 0V, f = 1MHz
1.6
10
50
1
1
100
I
FP
= 100mA
The angle in which radiant intencity is 50%
For optical control systems
Features
High-power output, high-efficiency : P
O
= 6 mW (typ.)
Wide directivity, matched for external optical systems :
θ
= 100 deg.
Infrared light emission close to monochromatic light :
λ
P
= 950 nm
Optimum for mesuring instruments and control equipments
in conbination with silicon photodetectors
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