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參數(shù)資料
| 型號： | L6714TR |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 4 phase controller with embedded drivers for Intel VR10, VR11 and AMD 6Bit CPUs |
| 中文描述： | 4英特爾VR10，VR11和AMD的6位嵌入式CPU的司機(jī)相控制器 |
| 文件頁數(shù)： | 30/70頁 |
| 文件大?。?/td> | 572K |
| 代理商： | L6714TR |
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Power dissipation
L6714
30/70
9
Power dissipation
L6714 embeds high current MOSFET drivers for both high side and low side MOSFET: it is
then important to consider the power the device is going to dissipate in driving them in order
to avoid overcoming the maximum junction operative temperature. In addition, since the
device has an exposed pad to better dissipate the power, the thermal resistance between
junction and ambient consequent to the layout is also important: thermal pad need to be
soldered to the PCB ground plane through several VIAs in order to facilitate the heat
dissipation.
Two main terms contribute to the device power dissipation: bias power and drivers' power.
The first one (P
DC
) depends on the static consumption of the device through the supply pins
and is simply quantifiable as follows (assuming to supply HS and LS drivers with the same
VCC of the device):
where N is the number of phases.
Drivers' power is the power needed by the driver to continuously switch on and off the
external MOSFET; it is a function of the switching frequency and total gate charge of the
selected MOSFET. It can be quantified considering that the total power P
SW
dissipated to
switch the MOSFET (easy calculable) is dissipated by three main factors: external gate
resistance (when present), intrinsic MOSFET resistance and intrinsic driver resistance. This
last term is the important one to be determined to calculate the device power dissipation.
The total power dissipated to switch the MOSFET results:
External gate resistors help the device to dissipate the switching power since the same
power P
SW
will be shared between the internal driver impedance and the external resistor
resulting in a general cooling of the device. When driving multiple MOSFET in parallel, it is
suggested to use one gate resistor for each MOSFET.
P
DC
V
CC
I
CC
N
I
CCDRx
N
I
BOOTx
+
+
(
)
=
P
SW
N
F
SW
Q
GHS
V
BOOT
Q
GLS
V
CCDRx
+
(
)
=
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| L6726A | Single phase PWM controller |
| L6726ATR | Single phase PWM controller |
| L6727 | Single phase PWM controller |
| L6727TR | Single phase PWM controller |
| L6730CQ | Adjustable step-down controller with synchronous rectification |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| L6716 | 制造商:STMicroelectronics 功能描述:DC DC Cntrlr Quad-OUT Sync Step Down 48-Pin VFQFPN EP Tray 制造商:STMicroelectronics 功能描述:HANDHELD & COMPUTER PM - Trays 制造商:STMicroelectronics 功能描述:2/3/4 Phase Controlr Embedded Driver |
| L6716TR | 功能描述:開關(guān)變換器、穩(wěn)壓器與控制器 2/3/4 phase CNTRL Embedded Drivers RoHS:否 制造商:Texas Instruments 輸出電壓:1.2 V to 10 V 輸出電流:300 mA 輸出功率: 輸入電壓:3 V to 17 V 開關(guān)頻率:1 MHz 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:WSON-8 封裝:Reel |
| L6717 | 制造商:STMicroelectronics 功能描述:High-Efficiency Hybrid AM2r2 Controller 48-Pin VFQFPN Tray 制造商:STMicroelectronics 功能描述:HANDHELD & COMPUTER PM - Trays 制造商:STMicroelectronics 功能描述:High EFF Hybrid CTRL I2C Embedded Driver |
| L6717A | 制造商:STMicroelectronics 功能描述:CPU Power Supply Controller Tray 制造商:STMicroelectronics 功能描述:HANDHELD & COMPUTER PM - Trays 制造商:STMicroelectronics 功能描述:High EFF Hybrid CTRL I2C Embedded Driver |
| L6717ATR | 制造商:STMicroelectronics 功能描述:CPU Power Supply Controller T/R 制造商:STMicroelectronics 功能描述:HANDHELD & COMPUTER PM - Tape and Reel 制造商:STMicroelectronics 功能描述:High EFF Hybrid CTRL I2C Embedded Driver |
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