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參數(shù)資料
| 型號： | K4E170811D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2M x 8Bit CMOS Dynamic RAM with Extended Data Out |
| 中文描述： | 200萬× 8位的CMOS動態(tài)隨機存儲器的擴展數(shù)據(jù)輸出 |
| 文件頁數(shù)： | 3/21頁 |
| 文件大?。?/td> | 257K |
| 代理商： | K4E170811D |
K4E170811D, K4E160811D
K4E170812D, K4E160812D
CMOS DRAM
ABSOLUTE MAXIMUM RATINGS
* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted
to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
Parameter
Symbol
Rating
Units
3.3V
5V
Voltage on any pin relative to V
SS
V
IN,
V
OUT
-0.5 to +4.6
-1.0 to +7.0
V
Voltage on V
CC
supply relative to V
SS
V
CC
-0.5 to +4.6
-1.0 to +7.0
V
Storage Temperature
Tstg
-55 to +150
-55 to +150
°
C
Power Dissipation
P
D
1
1
W
Short Circuit Output Current
I
OS
Address
50
50
mA
RECOMMENDED OPERATING CONDITIONS
(Voltage referenced to Vss, T
A
= 0 to 70
°
C)
*1 : V
CC
+1.3V/15ns(3.3V), V
CC
+2.0V/20ns(5V), Pulse width is measured at V
CC
*2 : -1.3V/15ns(3.3V), -2.0V/20ns(5V), Pulse width is measured at V
SS
Parameter
Symbol
3.3V
5V
Units
Min
Typ
Max
Min
Typ
Max
Supply Voltage
V
CC
3.0
3.3
3.6
4.5
5.0
5.5
V
Ground
V
SS
0
0
0
0
0
0
V
Input High Voltage
V
IH
2.0
-
V
CC
+0.3
*1
0.8
2.4
-
V
CC
+1.0
*1
0.8
V
Input Low Voltage
V
IL
-0.3
*2
-
-1.0
*2
-
V
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions unless otherwise noted.)
Max
Parameter
Symbol
Min
Max
Units
3.3V
Input Leakage Current (Any input 0
≤
V
IN
≤
V
IN
+0.3V,
all other input pins not under test=0 Volt)
I
I(L)
-5
5
uA
Output Leakage Current
(Data out is disabled, 0V
≤
V
OUT
≤
V
CC
)
I
O(L)
-5
5
uA
Output High Voltage Level(I
OH
=-2mA)
V
OH
2.4
-
V
Output Low Voltage Level(I
OL
=2mA)
V
OL
-
0.4
V
5V
Input Leakage Current (Any input 0
≤
V
IN
≤
V
IN
+0.5V,
all other input pins not under test=0 Volt)
I
I(L)
-5
5
uA
Output Leakage Current
(Data out is disabled, 0V
≤
V
OUT
≤
V
CC
)
I
O(L)
-5
5
uA
Output High Voltage Level(I
OH
=-5mA)
V
OH
2.4
-
V
Output Low Voltage Level(I
OL
=4.2mA)
V
OL
-
0.4
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4E170812D | 2M x 8Bit CMOS Dynamic RAM with Extended Data Out |
| K4E641611D-TC50 | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| K4E661611D | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| K4E661611D-TC50 | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4E170812D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 8Bit CMOS Dynamic RAM with Extended Data Out |
| K4E171611D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
| K4E171612D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
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