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參數(shù)資料
| 型號(hào)： | K4E151611D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
| 中文描述： | 100萬× 16的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器的擴(kuò)展數(shù)據(jù)輸出 |
| 文件頁數(shù)： | 4/35頁 |
| 文件大?。?/td> | 553K |
| 代理商： | K4E151611D |
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K4E171611D, K4E151611D
K4E171612D, K4E151612D
CMOS DRAM
*Note :
I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
, I
CC3
and I
CC6,
address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one Hyper page mode cycle time, t
HPC
.
DC AND OPERATING CHARACTERISTICS
(Continued)
I
CC1
* : Operating Current (RAS and UCAS, LCAS, Address cycling @t
RC
=min.)
I
CC2
: Standby Current (RAS=UCAS=LCAS=W=V
IH
)
I
CC3
* : RAS-only Refresh Current (UCAS=LCAS=V
IH
, RAS, Address cycling @t
RC
=min.)
I
CC4
* : Hyper Page Mode Current (RAS=V
IL
, UCAS or LCAS, Address cycling @t
HPC
=min.)
I
CC5
: Standby Current (RAS=UCAS=LCAS=W=V
CC
-0.2V)
I
CC6
* : CAS-Before-RAS Refresh Current (RAS, UCAS or LCAS cycling @t
RC
=min.)
I
CC7
: Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(V
IH
)=V
CC
-0.2V, Input low voltage(V
IL
)=0.2V, UCAS, LCAS=0.2V,
DQ=Don
′
t care, T
RC
=31.25us(4K/L-ver), 125us(1K/L-ver)
T
RAS
=T
RAS
min~300ns
I
CCS
: Self Refresh Current
RAS=UCAS=LCAS=V
IL
, W=OE=A0 ~ A11=V
CC
-0.2V or 0.2V,
DQ0 ~ DQ15=V
CC
-0.2V, 0.2V or Open
Symbol
Power
Speed
Max
Units
K4E171612D
100
90
80
1
1
100
90
80
110
100
90
0.5
200
100
90
80
300
150
K4E151612D
150
140
130
1
1
150
140
130
110
100
90
0.5
200
150
140
130
200
150
K4E171611D
100
90
80
2
1
100
90
80
110
100
90
1
200
110
90
80
350
200
K4E151611D
150
140
130
2
1
150
140
130
110
100
90
1
200
150
140
130
250
200
I
CC1
Don
′
t care
-45
-50
-60
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
mA
mA
mA
uA
uA
I
CC2
Normal
L
Don
′
t care
I
CC3
Don
′
t care
-45
-50
-60
-45
-50
-60
I
CC4
Don
′
t care
I
CC5
Normal
L
Don
′
t care
I
CC6
Don
′
t care
-45
-50
-60
I
CC7
I
CCS
L
L
Don
′
t care
Don
′
t care
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4E151612D | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
| K4E171611D | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
| K4E171612D | Aluminum Electrolytic Radial Lead Hi Temp Capacitor; Capacitance: 22uF; Voltage: 100V; Case Size: 10x12.5 mm; Packaging: Bulk |
| K4E160411D | Aluminum Electrolytic Radial Lead Hi Temp Capacitor; Capacitance: 220uF; Voltage: 35V; Case Size: 10x16 mm; Packaging: Bulk |
| K4E160412D | 4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4E151611D-JC60000 | 制造商:Samsung SDI 功能描述:# 76-58489 |
| K4E151611DTC60 | 制造商:Samsung Semiconductor 功能描述: |
| K4E151612D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
| K4E160411C-BC60 | 制造商:Samsung Semiconductor 功能描述:DRAM Chip EDO 16M-Bit 4Mx4 5V 24-Pin SOJ |
| K4E160411D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
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