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參數(shù)資料
| 型號(hào)： | K4D551638F-TC50 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Mbit GDDR SDRAM |
| 中文描述： | 片256Mbit GDDR SDRAM內(nèi)存 |
| 文件頁(yè)數(shù)： | 14/16頁(yè) |
| 文件大小： | 206K |
| 代理商： | K4D551638F-TC50 |
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256M GDDR SDRAM
K4D551638F-TC
- 14 -
Rev 1.7 (June 2004)
Target Spec
AC CHARACTERISTICS (I)
Note : 1. For normal write operation, even numbers of Din are to be written inside DRAM
Parameter
Symbol
-33
-36
-40
-50
-60
Unit Note
Min
15
17
10
5
3
5
3
Max
-
-
100K
-
-
-
-
Min
15
17
10
5
3
5
3
Max
-
-
100K
-
-
-
-
Min
13
15
9
4
2
4
3
Max
-
-
100K
-
-
-
-
Min
12
14
8
4
2
4
2
Max
-
-
100K
-
-
-
-
Min
10
12
7
3
2
3
2
Max
-
-
100K
-
-
-
-
Row cycle time
Refresh row cycle time
Row active time
RAS to CAS delay for Read
RAS to CAS delay for Write
Row precharge time
Row active to Row active
Last data in to Row precharge @Nor-
mal Precharge
Last data in to Row precharge @Auto
Precharge
Last data in to Read command
Col. address to Col. address
Mode register set cycle time
Auto precharge write recovery + Pre-
charge
Exit self refresh to read command
tRC
tRFC
tRAS
tRCDRD
tRCDWR
tRP
tRRD
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tWR
3
-
3
-
3
-
3
-
3
-
tCK
1
tWR_A
3
-
3
-
3
-
3
-
3
-
tCK
1
tCDLR
tCCD
tMRD
3
1
2
-
-
-
2
1
2
-
-
-
2
1
2
-
-
-
2
1
2
-
-
-
1
1
2
-
-
-
tCK
tCK
tCK
1
tDAL
8
-
8
-
7
-
7
-
6
-
tCK
tXSR
200
3tCK
+tIS
7.8
-
200
3tCK
+tIS
7.8
-
200
3tCK
+tIS
7.8
-
200
1tCK
+tIS
7.8
-
200
1tCK
+tIS
7.8
-
tCK
Power down exit time
tPDEX
-
-
-
-
-
ns
Refresh interval time
tREF
-
-
-
-
-
us
AC CHARACTERISTICS (II)
K4D551638D-TC33
Frequency
300MHz ( 3.3ns )
Cas Latency
3
tRC
15
tRFC
17
tRAS
10
tRCDRD
5
tRCDWR
3
tRP
5
tRRD
3
tDAL
8
Unit
tCK
K4D551638D-TC36
Frequency
275MHz ( 3.6ns )
Cas Latency
3
tRC
15
tRFC
17
tRAS
10
tRCDRD
5
tRCDWR
3
tRP
5
tRRD
3
tDAL
8
Unit
tCK
K4D551638D-TC40
Frequency
250MHz ( 4.0ns )
200MHz ( 5.0ns )
Cas Latency
3
3
tRC
13
12
tRFC
15
14
tRAS
9
8
tRCDRD
4
4
tRCDWR
2
2
tRP
4
4
tRRD
3
3
tDAL
7
7
Unit
tCK
tCK
K4D551638D-TC50
Frequency
200MHz ( 5.0ns )
Cas Latency
3
tRC
12
tRFC
14
tRAS
8
tRCDRD
4
tRCDWR
2
tRP
4
tRRD
3
tDAL
7
Unit
tCK
K4D551638D-TC60
Frequency
166MHz ( 6.0ns )
Cas Latency
3
tRC
10
tRFC
12
tRAS
7
tRCDRD
3
tRCDWR
2
tRP
3
tRRD
2
tDAL
6
Unit
tCK
(Unit : Number of Clock)
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| K4D551638F-TC60 | 256Mbit GDDR SDRAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4D551638F-TC50000 | 制造商:Samsung Semiconductor 功能描述:DRAM Chip GDDR SDRAM 256M-Bit 16Mx16 2.6V 66-Pin TSOP-II |
| K4D551638F-TC60 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mbit GDDR SDRAM |
| K4D553235F-GC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M GDDR SDRAM |
| K4D553235F-GC25 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M GDDR SDRAM |
| K4D553235F-GC2A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M GDDR SDRAM |
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