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參數(shù)資料
| 型號： | K4B4G0846B-MCF80 |
| 元件分類： | DRAM |
| 英文描述： | 512M X 8 DDR DRAM, 0.3 ns, PBGA78 |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 |
| 文件頁數(shù)： | 15/59頁 |
| 文件大?。?/td> | 1079K |
| 代理商： | K4B4G0846B-MCF80 |
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Page 22 of 59
Rev. 1.0 March 2009
DDP 4Gb DDR3 SDRAM
K4B4G0446B
K4B4G0846B
9.7.1 Output Drive Temperature and Voltage sensitivity
If temperature and/or voltage change after calibration, the tolerance limits widen according to table 23 and 24.
T = T - T(@calibration); V = VDDQ - VDDQ (@calibration); VDD = VDDQ
*dRONdT and dRONdV are not subject to production test but are verified by design and characterization
[ Table 23 ] Output Driver Sensitivity Definition
[ Table 24 ] Output Driver Voltage and Temperature Sensitivity
9.8 On-Die Termination (ODT) Levels and I-V Characteristics
On-Die Termination effective resistance RTT is defined by bits A9, A6 and A2 of MR1 register.
ODT is applied to the DQ,DM, DQS/DQS and TDQS,TDQS (x8 devices only) pins.
A functional representation of the on-die termination is shown below. The individual pull-up and pull-down resistors (RTTpu and RTTpd) are defined as
follows :
On-Die Termination : Definition of Voltages and Currents
Chip in Termination Mode
Figure 12. On-Die Termination : Definition of Voltages and Currents
Min
Max
Units
RONPU@VOHDC
0.6 - dRONdTH * |T| - dRONdVH * |V|
1.1 + dRONdTH * |T| + dRONdVH * |V|
RZQ/7
RON@VOMDC
0.9 - dRONdTM * |T| - dRONdVM * |V|
1.1 + dRONdTM * |T| + dRONdVM * |V|
RZQ/7
RONPD@VOLDC
0.6 - dRONdTL * |T| - dRONdVL * |V|
1.1 + dRONdTL * |T| + dRONdVL * |V|
RZQ/7
Speed Bin
800/1066/1333
1600
Units
Min
Max
Min
Max
dRONdTM
0
1.5
0
1.5
%/
°C
dRONdVM
0
0.15
0
0.13
%/mV
dRONdTL
0
1.5
0
1.5
%/
°C
dRONdVL
0
0.15
0
0.13
%/mV
dRONdTH
0
1.5
0
1.5
%/
°C
dRONdVH
0
0.15
0
0.13
%/mV
RTTpu =
VDDQ-VOUT
l Iout l
under the condition that RTTpd is turned off
RTTpd =
VOUT
l Iout l
under the condition that RTTpu is turned off
VDDQ
DQ
VSSQ
RTT
Pu
Ipd
RTT
Pd
To
other
circuitry
like
RCV,
...
ODT
Ipu
Iout
VOUT
Iout=Ipd-Ipu
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4B4G0846B-MCH9 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDP 4Gb B-die DDR3 SDRAM Specification |
| K4B4G0846D-BCK0000 | 制造商:Samsung Semiconductor 功能描述: |
| K4B4G1646B-HCH9000 | 制造商:Samsung Semiconductor 功能描述: |
| K4B4G1646B-HCK000 | 制造商:Samsung Semiconductor 功能描述: |
| K4B4G1646B-HCK0000 | 制造商:Samsung 功能描述:DDR SGRAM X16 TSOP2 - Trays |
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