| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| SI7904DN-T1-GE3 | Vishay Siliconix | MOSFET DUAL N-CH D-S 20V 1212-8 | 0 | 3,000:$0.67200 |
| SI7214DN-T1-GE3 | Vishay Siliconix | MOSFET DUAL N-CH D-S 30V 1212-8 | 0 | 3,000:$0.67200 |
| SI7228DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V PWRPAK 1212-8 | 0 | 3,000:$0.61600 |
| SIZ720DT-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 20V POWERPAIR | 0 | 3,000:$0.60900 |
| SIZ710DT-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 20V POWERPAIR | 5 | 1:$1.63000 25:$1.29000 100:$1.16100 250:$1.01052 500:$0.90300 1,000:$0.70950 |
| SIZ710DT-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 20V POWERPAIR | 5 | 1:$1.63000 25:$1.29000 100:$1.16100 250:$1.01052 500:$0.90300 1,000:$0.70950 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | 2 個(gè) N 溝道（雙） |
| FET 特點(diǎn): | 邏輯電平門(mén) |
| 漏極至源極電壓(Vdss): | 20V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 5.3A |
| 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 30 毫歐 @ 7.7A，4.5V |
| Id 時(shí)的 Vgs(th)（最大）: | 1V @ 935µA |
| 閘電荷(Qg) @ Vgs: | 15nC @ 4.5V |
| 輸入電容 (Ciss) @ Vds: | - |
| 功率 - 最大: | 1.3W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | PowerPAK? 1212-8 雙 |
| 供應(yīng)商設(shè)備封裝: | PowerPAK? 1212-8 Dual |
| 包裝: | 帶卷 (TR) |