| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
|---|---|---|---|---|
| SQ4936EY-T1-GE3 | Vishay Siliconix | MOSFET DUAL N-CH 30V 7A 8SOIC | 0 | 2,500:$0.97200 |
| SI4563DY-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 40V 8-SOIC | 0 | 2,500:$0.97200 |
| SI7997DP-T1-GE3 | Vishay Siliconix | MOSFET P-CH 30V 8-SOIC | 0 | 1:$2.49000 25:$1.91720 100:$1.73950 250:$1.56200 500:$1.34900 1,000:$1.13600 |
| SI7997DP-T1-GE3 | Vishay Siliconix | MOSFET P-CH 30V 8-SOIC | 0 | 1:$2.49000 25:$1.91720 100:$1.73950 250:$1.56200 500:$1.34900 1,000:$1.13600 |
| SI7997DP-T1-GE3 | Vishay Siliconix | MOSFET P-CH 30V 8-SOIC | 0 | 3,000:$0.95850 6,000:$0.92300 15,000:$0.88750 30,000:$0.86975 75,000:$0.85200 |
| SI7905DN-T1-E3 | Vishay Siliconix | MOSFET DUAL P-CH D-S 40V 1212-8 | 0 | 3,000:$0.90450 |
| SI4943BDY-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 20V 8-SOIC | 0 | 2,500:$0.90450 |
| 類別: | 分離式半導體產(chǎn)品 |
|---|---|
| FET 型: | 2 個 N 溝道（雙） |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 30V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 7A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 36 毫歐 @ 6A，10V |
| Id 時的 Vgs(th)（最大）: | 2.5V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 20nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 830pF @ 25V |
| 功率 - 最大: | 3.3W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 8-SOIC（0.154"，3.90mm 寬） |
| 供應商設備封裝: | 8-SOICN |
| 包裝: | 帶卷 (TR) |