| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
|---|---|---|---|---|
| DMP21D0UFD-7 | Diodes Inc | MOS P CH 20V 1.14A X1-DFN1212-3 | 6,000 | 3,000:$0.10125 6,000:$0.09563 15,000:$0.08719 30,000:$0.08156 75,000:$0.07313 150,000:$0.07031 |
| DMP2018LFK-7 | Diodes Inc | MOSFET P-CH 20V 9.2A 6-DFN | 4,903 | 1:$0.45000 10:$0.38300 25:$0.33560 100:$0.28740 250:$0.24924 500:$0.21112 1,000:$0.16275 |
| DMP2018LFK-7 | Diodes Inc | MOSFET P-CH 20V 9.2A 6-DFN | 3,000 | 3,000:$0.14415 6,000:$0.13485 15,000:$0.12555 30,000:$0.11904 75,000:$0.11625 150,000:$0.11160 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET P 通道，金屬氧化物 |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 20V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 1.14A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 495 毫歐 @ 800mA，4.5V |
| Id 時的 Vgs(th)（最大）: | 1.2V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 3nC @ 4.5V |
| 輸入電容 (Ciss) @ Vds: | 80pF @ 10V |
| 功率 - 最大: | 930mW |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 3-XDFN |
| 供應(yīng)商設(shè)備封裝: | 3-X1DFN1212 |
| 包裝: | 帶卷 (TR) |