| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| SI1050X-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 8V SC-89-6 | 5,757 | 1:$0.61000 25:$0.42360 100:$0.36300 250:$0.31352 500:$0.26950 1,000:$0.20900 |
| SI1304BDL-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V SC-70-3 | 4,735 | 1:$0.52000 25:$0.36560 100:$0.31350 250:$0.27076 500:$0.23276 1,000:$0.18050 |
| SI1304BDL-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V SC-70-3 | 4,735 | 1:$0.52000 25:$0.36560 100:$0.31350 250:$0.27076 500:$0.23276 1,000:$0.18050 |
| SI1304BDL-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V SC-70-3 | 3,000 | 3,000:$0.14725 6,000:$0.13775 15,000:$0.12825 30,000:$0.12113 75,000:$0.11875 150,000:$0.11400 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 8V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | - |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 86 毫歐 @ 1.34A，4.5V |
| Id 時(shí)的 Vgs(th)（最大）: | 900mV @ 250µA |
| 閘電荷(Qg) @ Vgs: | 11.6nC @ 5V |
| 輸入電容 (Ciss) @ Vds: | 585pF @ 4V |
| 功率 - 最大: | 236mW |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | SOT-563，SOT-666 |
| 供應(yīng)商設(shè)備封裝: | SC-89-6 |
| 包裝: | 剪切帶 (CT) |