分離式半導(dǎo)體產(chǎn)品 IPB036N12N3 G品牌、價格、PDF參數(shù)

IPB036N12N3 G • 品牌、價格
元器件型號 廠商 描述 數(shù)量 價格
IPB036N12N3 G Infineon Technologies MOSFET N-CH 120V 180A TO263-7 2,204 1:$7.24000
10:$6.51500
25:$5.91160
100:$5.30840
250:$4.82580
500:$4.22258
IPB320N20N3 G Infineon Technologies MOSFET N-CH 200V 34A TO263-3 1,852 1:$3.33000
10:$3.00100
25:$2.72280
100:$2.44490
250:$2.22260
500:$1.94478
IPB320N20N3 G Infineon Technologies MOSFET N-CH 200V 34A TO263-3 1,852 1:$3.33000
10:$3.00100
25:$2.72280
100:$2.44490
250:$2.22260
500:$1.94478
IPB320N20N3 G Infineon Technologies MOSFET N-CH 200V 34A TO263-3 0 1,000:$1.55582
2,000:$1.47803
5,000:$1.41691
10,000:$1.37801
25,000:$1.33356
SPP80P06P H Infineon Technologies MOSFET P-CH 60V 80A TO-220 508 1:$3.30000
10:$2.95100
25:$2.65560
100:$2.41940
250:$2.18336
500:$1.95914
1,000:$1.65228
2,500:$1.56967
5,000:$1.50476
IPI65R420CFD Infineon Technologies MOSFET N-CH 650V 8.7A TO262 500 1:$3.30000
10:$2.94700
25:$2.65240
100:$2.41670
250:$2.18096
500:$1.95698
1,000:$1.65046
2,500:$1.56794
5,000:$1.50310
IPB036N12N3 G • PDF參數(shù)
類別: 分離式半導(dǎo)體產(chǎn)品
FET 型: MOSFET N 通道，金屬氧化物
FET 特點: 標(biāo)準(zhǔn)
漏極至源極電壓(Vdss): 120V
電流 - 連續(xù)漏極(Id) @ 25° C: 180A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C: 3.6 毫歐 @ 100A，10V
Id 時的 Vgs(th)（最大）: 4V @ 270µA
閘電荷(Qg) @ Vgs: 211nC @ 10V
輸入電容 (Ciss) @ Vds: 13800pF @ 60V
功率 - 最大: 300W
安裝類型: 表面貼裝
封裝/外殼: TO-263-7，D²Pak（6 引線+接片），TO-263CB
供應(yīng)商設(shè)備封裝: PG-TO263-7
包裝: Digi-Reel®